| Project/Area Number |
23656083
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Materials/Mechanics of materials
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| Research Institution | Kagoshima University (2012-2013)
Kyoto University (2011) |
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Principal Investigator |
IKEDA Toru 鹿児島大学, 理工学研究科, 教授 (40243894)
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| Co-Investigator(Renkei-kenkyūsha) |
KOGANEMARU Masaaki 福岡県産業, 科学技術振興財団 (20416506)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 材料設計 / プロセス / 物性 / 評価 / ひずみ効果 / 半導体 / 応力 / トランジスタ / 電気特性変動 / nMOSFET / pMOSFET / シリコン / 電子移動度 / デバイスシミュレーション / 移動度 |
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| Research Abstract |
This study discusses a numerical model for analyzing the effects of mechanical stress on semiconductor devices. In other words, drift-diffusion device simulation is conducted using a physical model incorporating the effects of mechanical stress. Then, each impact of the stress-induced physical phenomena is analyzed. In our previous study, three physical phenomena that were attributed to mechanical stress have been modeled in our electron mobility model, i.e., the changes in relative population, the momentum relaxation time and the effective mass of electrons in conduction-band valleys. In this study, the stress-induced change of intrinsic carrier density is modeled. Stress-induce variations of drain current characteristics on nMOSFETs are evaluated using a drift-diffusion device simulator including above mentioned physical models. It is demonstrated that the impact of stress-induced change of intrinsic carrier density is small for our evaluated nMOSFETs.
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