| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Research Abstract |
To satisfy the demand for diamond substrates in power semiconductor device fabrication,we have developed a novel polishing method utilizing reactive species generated on Fecatalyst surface in hydrogen peroxide solution and applied the proposed technique toflatten a single-crystal diamond substrate. As a result, the whole area on the diamondsurface could be equally smoothed and an atomically smooth surface with an rmsroughness of 0.082 nm is obtained by our proposed method.
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