| Project/Area Number |
23656143
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thermal engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
SHIBUTA Yasushi 東京大学, 大学院・工学系研究科, 講師 (90401124)
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| Co-Investigator(Renkei-kenkyūsha) |
KAMBARA Makoto 東京大学, 大学院・工学系研究科, 准教授 (80359661)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | 分子動力学法 / シリコン / エピタキシー / Chemical Vapor Deposition / ナノク ラスター / CVD / ナノクラスター |
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| Research Abstract |
In this project, the initial formation process of Si precursor clusters during the thin film synthesis via a plasma CVD is investigated by the molecular dynamics (MD) simulation. The threshold of conditions for the epitaxial/grain growth is estimated from the simulation results. In addition, the MD simulation of the multiple deposition process of Si clusters is performed and it is revealed that the successive deposition of smaller cluster leads to the epitaxial growth. Moreover, the effect of hydrogen on the Si epitaxial growth is discussed. From the MD simulation, it is revealed that epitaxial growth can be occurred with SiH clusters, which are smaller than the Si cluster used for aforementioned simulation.
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