Development of a spatio-time-resolved cathodoluminescence spectroscopy technique applicable for wide bandgap semiconductors through the generation and focusing of high-brightness femtosecond pulsed photoelectron beams
Project/Area Number |
23656206
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Electronic materials/Electric materials
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Research Institution | Tohoku University |
Principal Investigator |
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Co-Investigator(Renkei-kenkyūsha) |
HAZU Kouji 東北大学, 多元物質科学研究所, 助教 (30367057)
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Project Period (FY) |
2011 – 2012
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Project Status |
Completed (Fiscal Year 2012)
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Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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Keywords | 電気・電子材料 / 高輝度フェムト秒収束電子線 / ワイドバンドギャップ半導体 / 時間空間同時分解計測 / 結晶評価 |
Research Abstract |
To probe local carrier dynamics in wide bandgap semiconductors such as AlN and high AlN mole fraction AlGaN alloys, the use of spatio-time-resolved cathodoluminescence (STRCL) technique offering high spatial and temporal resolutions is preferred, becauseelectron beams can be focused and implanted into sub-micrometer to nanometer regions of interest. In this study, we succeeded in developing a novel front-excitation type high-brightness pulsed photoelectron (PE)- gun driven by femtosecond laser pulses, and the STRCL measurement system equipped with this PE-gun was used to measure the local emission dynamics in GaN, AlN, and high AlN mole fraction AlGaN alloys.
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Report
(3 results)
Research Products
(41 results)
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[Presentation] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy2012
Author(s)
S. F. Chichibu, Y. Ishikawa, K. Hazu, M. Tashiro, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono
Organizer
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012), Session J3: Materials for Solid State Lighting, Hawaii Convention Center
Place of Presentation
Honolulu, Hawaii, USA
Year and Date
2012-10-08
Related Report
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[Presentation] Advantages and issues of m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for InGaN and AlGaN epitaxial growth, 招待講演2012
Author(s)
S. F. Chichibu, K. Hazu, P. Corfdir, J.-D. Ganiere, B. Deveaud-Pledran, N. Grandjean, S. Kubo, H. Namita, S. Nagao, K. Fujito, K. Shimoyama, and A. Uedono
Organizer
German Physical Society (DPG) Spring Meeting, Technical University of Berlin
Place of Presentation
Berlin, Germany
Year and Date
2012-03-26
Related Report
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[Presentation] Advantages and issues of m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for InGaN and AlGaN epitaxial growth2012
Author(s)
S. F. Chichibu, K. Hazu, P. Corfdir, J. -D. Ganiere, B. Deveaud-Pledran, N. Grandjean, S. Kubo, H. Namita, S. Nagao, K. Fujito, K. Shimoyama, and A. Uedono
Organizer
German Physical Society (DPG) Spring Meeting(招待講演)
Place of Presentation
Berlin, Germany
Related Report
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[Presentation] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy
Author(s)
S. F. Chichibu, Y. Ishikawa, K. Hazu, M. Tashiro, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono
Organizer
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012), ECS222nd
Place of Presentation
Hawaii, USA
Related Report
Invited
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