| Project/Area Number |
23656206
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
HAZU Kouji 東北大学, 多元物質科学研究所, 助教 (30367057)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | 電気・電子材料 / 高輝度フェムト秒収束電子線 / ワイドバンドギャップ半導体 / 時間空間同時分解計測 / 結晶評価 |
|---|
| Research Abstract |
To probe local carrier dynamics in wide bandgap semiconductors such as AlN and high AlN mole fraction AlGaN alloys, the use of spatio-time-resolved cathodoluminescence (STRCL) technique offering high spatial and temporal resolutions is preferred, becauseelectron beams can be focused and implanted into sub-micrometer to nanometer regions of interest. In this study, we succeeded in developing a novel front-excitation type high-brightness pulsed photoelectron (PE)- gun driven by femtosecond laser pulses, and the STRCL measurement system equipped with this PE-gun was used to measure the local emission dynamics in GaN, AlN, and high AlN mole fraction AlGaN alloys.
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