| Project/Area Number |
23656211
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Electro-Communications |
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Principal Investigator |
NOZAKI Shinji 電気通信大学, 大学院・情報理工学研究科, 教授 (20237837)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | レクテナ / 整流器 / 酸化ニッケル / 光酸化 / 全空乏 / 太陽光発電 / ショットキー |
|---|
| Research Abstract |
Although there were many reports on the tunnel diode with NiO between two metals, they did not show good rectification in their I-V characteristics. This project analyzed the reason why the reported diodes did not show good rectification and recommended the suitable structure. In the structure, the NiO semiconductor was formed by UV oxidation of Ni and sandwiched between Pt and Al to form a Schottky diode.
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