A STUDY OF LIGHT-EMITTING DEVICES WITH AN ULTRATHIN SILICON/SILICON DIOXIDE TWO-DIMENSIONAL QUANTUM STRUCTURE

• Project/Area Number: 23656217
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: MORITA Mizuho 大阪大学, 大学院・工学研究科, 教授 (50157905)
• Project Period (FY): 2011 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000); Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2011: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
• Keywords: シリコン / シリコン酸化膜 / 発光デバイス / 量子井戸 / トンネル現象

Research Abstract

An electroluminescence peak at energies higher than the band gap of bulk silicon has been observed in metal-oxide-semiconductor tunnel devices with an ultrathin silicon layer. This indicates that the peak is due to subband -mediated transitions and due to trap-mediated transitions. It has been found that the external quantum efficiency increases with the decrease of the silicon layer thickness. This suggests that ultrathin silicon layers have quasi-direct band gap.

Research Products

• [Presentation] Electroluminescence in Metal-Oxide-Semiconductor Tunnel Diodes with an Ultrathin Silicon Layer (2012)
  • Author(s): A. Tsuchida, K. Matsumura, R. Yamada, Y. Oshikane, K. Kawai, J. Uchikoshi, K. Arima and M. Morita
  • Organizer: Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology
  • Place of Presentation: Not peer-reviewed,Osaka
  • Year and Date: 2012-10-23
• [Presentation] Electroluminescence in Metal-Oxide-Semiconductor Tunnel Diodes with Nanometer-Thick Silicon (2012)
  • Author(s): Mizuho Morita, Ayano Tsuchida, Kei Matsumura, Ryuta Yamada, Yasushi Oshikane, Kentaro Kawai, Junichi Uchikoshi, and Kenta Arima
  • Organizer: The Electrochemical Society
  • Place of Presentation: Seattle, USA
  • Year and Date: 2012-05-09
• [Presentation] Electroluminescence in Metal-Oxide-Semiconductor Tunnel Diodes with Nanometer-Thick Silicon (2012)
  • Author(s): Mizuho Morita, Ayano Tsuchida, Kei Matsumura, Ryuta Yamada, Yasushi Oshikane, Kentaro Kawai, Junichi Uchikoshi, and Kenta Arima
  • Organizer: ECS Transactions, 45(5), The Electrochemical Society
  • Place of Presentation: Seattle
  • Invited
• [Presentation] Electroluminescence in Metal-Oxide-Semiconductor Tunnel Diodes with an Ultrathin Silicon Layer (2012)
  • Author(s): A. Tsuchida, K. Matsumura, R. Yamada, Y. Oshikane, K. Kawai, J. Uchikoshi, K. Arima and M. Morita
  • Organizer: Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology
  • Place of Presentation: Osaka
• [Presentation] Electroluminescence in Ultrathin Silicon-on-Insulator Metal-Oxide-Semiconductor Tunnel Diodes (2011)
  • Author(s): A. Tsuchida, K. Matsumura, R. Yamada, Y. Oshikane, K. Kawai, J. Uchikoshi, K. Arima and M. Morita
  • Organizer: Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology
  • Place of Presentation: Osaka
  • Year and Date: 2011-10-01
• [Remarks]
  • URL: http://www-pm.prec.eng.osaka-u.ac.jp/
• [Remarks]
  • URL: http://www-pm.prec.eng.osaka-u.ac.jp/