A STUDY OF LIGHT-EMITTING DEVICES WITH AN ULTRATHIN SILICON/SILICON DIOXIDE TWO-DIMENSIONAL QUANTUM STRUCTURE
| Project/Area Number |
23656217
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
MORITA Mizuho 大阪大学, 大学院・工学研究科, 教授 (50157905)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | シリコン / シリコン酸化膜 / 発光デバイス / 量子井戸 / トンネル現象 |
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| Research Abstract |
An electroluminescence peak at energies higher than the band gap of bulk silicon has been observed in metal-oxide-semiconductor tunnel devices with an ultrathin silicon layer. This indicates that the peak is due to subband -mediated transitions and due to trap-mediated transitions. It has been found that the external quantum efficiency increases with the decrease of the silicon layer thickness. This suggests that ultrathin silicon layers have quasi-direct band gap.
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Report
(3 results)
Research Products
(7 results)
