Nitrogen δ doping into GaAs and development of efficient surface emitting devices

• Project/Area Number: 23656222
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Kobe University
• Principal Investigator: KITA Takashi 神戸大学, 大学院・工学研究科, 教授 (10221186)
• Co-Investigator(Kenkyū-buntansha): HARADA Yukihiro 神戸大学, 大学院・工学研究科, 助教 (10554355)
• Project Period (FY): 2011 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2011: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
• Keywords: 不純物 / GaAs / 窒素ペア / 光子放出

Research Abstract

Dilute impurity doping in semiconductors can be applied to fabricate ultimately uniform quantum dots because of their unique electronic structure. These dots are expected to be used in devices based on the interactions between excitons and photons. We developed a novel technique of nitrogen delta-doping into GaAs and clarify the optical properties of the exciton fine structure bound to nitrogen pairs. Furthermore, the device structure achieving efficient photon emission has been proposed.

Research Products

• [Journal Article] Effects of Pumping on Propagation Velocities of Confined Exciton Polaritons in GaAs/AlxGa1-xAs Double Heterostructure Thin Films Under Resonant and Non-Resonant Probe Conditions (2013)
  • Author(s): O. Kojima, S. Ohta, T. Kita, and T. Isu
  • Journal Title: J. Appl. Phys. Volume: Vol. 113 Issue: 1
  • DOI: 10.1063/1.4772717
  • NAID: 120005301743
  • Peer Reviewed
• [Journal Article] Enhancement of Optical Anisotropy by Interconnection Effect along Growth Direction in Multistacked Quantum Dots (2013)
  • Author(s): H. Tanaka, O. Kojima, T. Kita,and K. Akahane
  • Journal Title: Jpn. J. Appl. Phys. Volume: Vol. 52 Issue: 1R Pages: 012001-012001
  • DOI: 10.7567/jjap.52.012001
  • NAID: 40019557209
  • Peer Reviewed
• [Journal Article] Carrier Dynamics of the Intermediate State in InAs/GaAs Quantum Dots Coupled in a Photonic Cavity under Two-Photon Excitation (2012)
  • Author(s): T. Kita, T. Maeda, and Y. Harada
  • Journal Title: Phys. Rev. B Volume: Vol. 86 Issue: 3
  • DOI: 10.1103/physrevb.86.035301
  • NAID: 120005465536
  • Peer Reviewed
• [Journal Article] Extremely Uniform Bound Exciton States in Nitrogen δ-doped GaAs Studied by Photoluminescence Spectroscopy in External Magnetic Fields (2011)
  • Author(s): Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
  • Journal Title: J. Appl. Phys. Volume: Vol. 110 Issue: 8
  • DOI: 10.1063/1.3654015
  • NAID: 120003609782
  • Peer Reviewed
• [Journal Article] Depolarization Effect on Optical of Exciton States Confined in GaAs Thin Films (2011)
  • Author(s): T. Yamashita, O. Kojima, T. Kita, and T. Isu
  • Journal Title: J. Appl. Phys. Volume: Vol. 110 Issue: 4
  • DOI: 10.1063/1.3624667
  • Peer Reviewed
• [Journal Article] Observation of Phase Shifts in a Vertical Cavity Quantum Dot Switch (2011)
  • Author(s): C. Y. Jin, O.Kojima, T. Kita, O. Wada, and M. Hopkinson
  • Journal Title: Appl. Phys. Lett. Volume: Vol. 98 Issue: 23
  • DOI: 10.1063/1.3596704
  • Peer Reviewed
• [Journal Article] Dephasing of Excitonic Polaritons Confined in GaAs Thin Films (2011)
  • Author(s): O. Kojima, S. Watanabe, T. Kita, O. Wada, and T. Isu
  • Journal Title: J. Phys. Soc. Jpn Volume: Vol. 80, No. 3 Issue: 3 Pages: 034704-034704
  • DOI: 10.1143/jpsj.80.034704
  • NAID: 210000108943
  • Peer Reviewed
• [Journal Article] Interaction Between Conduction-band Edge and Nitrogen-related Localized Levels in Nitrogen δ-doped GaAs (2011)
  • Author(s): Y. Harada, O. Kojima, T. Kita, and O. Wada
  • Journal Title: Phys. Status Solidi C Volume: Vol. 8, No. 2 Issue: 2 Pages: 365-367
  • DOI: 10.1002/pssc.201000515
  • Peer Reviewed
• [Journal Article] Extremely Uniform Bound Exciton States in Nitrogen δ-doped GaAs Studied by Photoluminescence Spectroscopy in External Magnetic Fields (2011)
  • Author(s): Y. Harada
  • Journal Title: J. Appl. Phys. Volume: 110
  • NAID: 120003609782
  • Peer Reviewed
• [Journal Article] Depolarization Effect on Optical of Exciton States Confined in GaAs Thin Film (2011)
  • Author(s): T. Yamashita
  • Journal Title: J. Appl. Phys. Volume: 98
  • Peer Reviewed
• [Journal Article] Observation of Phase Shifts in a Vertical Cavity Quantum Dot Switch (2011)
  • Author(s): C. Y. Jin
  • Journal Title: Appl. Phys. Lett. Volume: 98
  • Peer Reviewed
• [Journal Article] Dephasing of Excitonic Polaritons Confined in GaAs Thin Films (2011)
  • Author(s): O. Kojima
  • Journal Title: J. Phys. Soc. Jpn. Volume: 80
  • Peer Reviewed
• [Journal Article] Interaction Between Conduction-band Edge and Nitrogen-related Localized Levels in Nitrogen δ-doped GaAs (2011)
  • Author(s): Y. Harada
  • Journal Title: Physica Status Solid C Volume: 8 Pages: 365-367
  • Peer Reviewed
• [Presentation] 窒素を高密度デルタドープしたGaAsの磁気光学特性 (2013)
  • Author(s): 原田幸弘、山本益輝、馬場健、喜多隆
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] 窒素を高密度デルタドープしたGaAsの磁気光学特性 (2013)
  • Author(s): 田幸弘、山本益輝、馬場健、喜多隆
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川
• [Presentation] 窒素デルタドーピングによるGaAs電子状態の制御 (2012)
  • Author(s): 山本益輝、木村航平、原田幸弘、喜多隆
  • Organizer: 第23回光物性研究会
  • Place of Presentation: 大阪市立大学
  • Year and Date: 2012-12-07
• [Presentation] GaAsエピタキシャル界面への窒素デルタドーピングと超高均一発光 (2012)
  • Author(s): 喜多隆
  • Organizer: 第42回結晶成長国内会議(NCCG-42)
  • Place of Presentation: 九州大学筑紫キャンパス、特別講演(招待講演)
  • Year and Date: 2012-11-10
• [Presentation] Control of Electronic Structure of GaAs Using Nitrogen δ-doping Technique (2012)
  • Author(s): M. Yamamoto, K. Kimura, Y. Harada, and T. Kita
  • Organizer: The17th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Nara
• [Presentation] 光共振器構造中のInAs/GaAs量子ドットにおける2段階光吸収の増強 (2012)
  • Author(s): 原田幸弘、前田剛志、喜多隆
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学、松山大学
• [Presentation] Strong Electron-Hole Correlation in Bound Exciton in Nitrogen δ-Doped GaAs (2012)
  • Author(s): Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
  • Organizer: The 10th International Conference on Excitonic Processes in Condensed Matter, Nanostructured and Molecular Materials
  • Place of Presentation: Groningen
• [Presentation] Extremely Uniform Excitonic States in Nitrogen δ-Doped GaAs (2012)
  • Author(s): Y. Harada, Tand T. Kita
  • Organizer: International Conference on Optical, Optoelectronic and Photonic Materials and Applications
  • Place of Presentation: Nara(招待講演)
• [Presentation] III-V族量子構造を用いたナノフォトニクス応用 (2012)
  • Author(s): 喜多隆
  • Organizer: シリコン・フォトニクス時限研究専門委員会第17回研究会
  • Place of Presentation: 神戸大学(招待講演)
• [Presentation] Delocalization ofElectronic States Formed by Nitrogen Pairs in GaAs (2012)
  • Author(s): M. Yamamoto, K. Kimura, Y. Harada, and T. Kita
  • Organizer: 31th Electronic Materials Symposium
  • Place of Presentation: Izu
• [Presentation] 原田幸弘"GaAsエピタキシャル界面への窒素のデルタドーピングと高均一発光特性 (2012)
  • Author(s): 喜多隆
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学、15p-E1-7(招待講演)
• [Presentation] Control of Electronic Structure of GaAs Using Nitrogen δ-doping Technique (2012)
  • Author(s): M. Yamamoto, K. Kimura, Y. Harada, and T. Kita
  • Organizer: The17th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Nara
• [Presentation] Strong Electron-Hole Correlation in Bound Exciton in Nitrogen δ-Doped GaAs (2012)
  • Author(s): Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
  • Organizer: The 10th International Conference on Excitonic Processes in Condensed Mattsr, Nanostructured and Molecular Materials
  • Place of Presentation: Groningen
• [Presentation] Extremely Uniform Excitonic States in Nitrogen δ-Doped GaAs (2012)
  • Author(s): Y. Harada and T. Kita
  • Organizer: International Conference on Optical, Optoelectronic and Photonic Materials and Applications
  • Place of Presentation: Nara
  • Invited
• [Presentation] 窒素デルタドーピングによるGaAs電子状態の制御 (2012)
  • Author(s): 山本益輝、木村航平、 原田幸弘、喜多隆
  • Organizer: 第23回光物性研究会
  • Place of Presentation: 大阪
• [Presentation] GaAsエピタキシャル界面への窒素デルタドーピングと超高均一発光 (2012)
  • Author(s): 喜多隆
  • Organizer: 第42回結晶成長国内会議
  • Place of Presentation: 福岡
  • Invited
• [Presentation] 光共振器構造中のInAs/GaAs量子ドットにおける2段階光吸収の増強 (2012)
  • Author(s): 原田幸弘、前田剛志、喜多隆
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 松山
• [Presentation] III-V族量子構造を用いたナノフォトニクス応用 (2012)
  • Author(s): 喜多隆
  • Organizer: シリコン・フォトニクス時限研究専門委員会第17回研究会
  • Place of Presentation: 神戸
  • Invited
• [Presentation] Delocalization of Electronic States Formed by Nitrogen Pairs in GaAs (2012)
  • Author(s): M. Yamamoto, K. Kimura, Y. Harada, and T. Kita
  • Organizer: 31th Electronic Materials Symposium
  • Place of Presentation: Izu
• [Presentation] GaAsエピタキシャル界面への窒素のデルタドーピングと高均一発光特性 (2012)
  • Author(s): 喜多隆
  • Organizer: 第59回応用物理学関係連合講演会(招待講演)
  • Place of Presentation: 東京
• [Presentation] GaAs中の窒素ペアに束縛された励起子における励起子一格子相互作用 (2011)
  • Author(s): 原田幸弘、久保輝宜、井上知也、小島磨、喜多隆
  • Organizer: 第22回光物性研究会(2011)
  • Place of Presentation: 熊本大学
• [Presentation] Effect of Capping Layer Growth on Bound Exciton Luminescence in Nitrogen δ-Doped GaAs (2011)
  • Author(s): Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
  • Organizer: 2011 International Conference on Solid State Devices and Materials, Aichi
  • Place of Presentation: Aichi
• [Presentation] GaAs中の窒素ペアに束縛された励起子分子の磁気光学特性 (2011)
  • Author(s): 原田幸弘、久保輝宜、井上知也、小島磨、喜多隆
  • Organizer: 日本物理学会2011年秋季大会、
  • Place of Presentation: 富山大学、21pPSA-37
• [Presentation] GaAs中の窒素ペアに束縛された励起子のフォノンサイドバンド発光 (2011)
  • Author(s): 原田幸弘、久保輝宜、井上知也、小島磨、喜多隆
  • Organizer: 第72回応用物理学関係連合講演会
  • Place of Presentation: 山形大学
• [Presentation] Capping Layer Dependence of Bound Exciton Luminescence in Nitrogen δ-Doped GaAs (2011)
  • Author(s): Y. Harada, T.Kubo, T. Inoue, O. Kojima, and T. Kita
  • Organizer: 30th Electronic Materials Symposium
  • Place of Presentation: Biwako
• [Presentation] Diamagnetic Shift of Exciton Bound to the Nitrogen Pairs in GaAs (2011)
  • Author(s): Y. Harada, T. Kubo, T. Inoue, O. Kojima, T. Kita
  • Organizer: 38th International Symposium on Compound Semiconductors
  • Place of Presentation: Germany
• [Presentation] GaAs中の窒素ペアに束縛された励起子における励起子一格子相互作用 (2011)
  • Author(s): 原田幸弘
  • Organizer: 第22回光物性研究会
  • Place of Presentation: 熊本
• [Presentation] Effect of Capping Layer Growth on Bound Exciton Luminescence in Nitrogen δ-Doped GaAs (2011)
  • Author(s): Y. Harada
  • Organizer: 2011 International Conference on Solid State Devices and Materials
  • Place of Presentation: 名古屋
• [Presentation] GaAs中の窒素ペアに束縛された励起子分子の磁気光学特性 (2011)
  • Author(s): 原田幸弘
  • Organizer: 日本物理学会2011年秋季大会
  • Place of Presentation: 富山
• [Presentation] GaAs中の窒素ペアに束縛された励起子のフォノンサイドバンド発光 (2011)
  • Author(s): 原田幸弘
  • Organizer: 第72回応用物理学関係連合講演会
  • Place of Presentation: 山形
• [Presentation] Capping Layer Dependence of Bound Exciton Luminescence in Nitrogen δ-Doped GaAs (2011)
  • Author(s): Y. Harada
  • Organizer: 第30回電子材料シンポジウム
  • Place of Presentation: 滋賀
• [Presentation] Diamagnetic Shift of Exciton Bound to the Nitrogen Pairs in GaAs (2011)
  • Author(s): Y. Harada
  • Organizer: 38th International Symposium on Compound Semiconductors
  • Place of Presentation: Berlin
• [Remarks]
  • URL: http://www.research.kobe-u.ac.jp/eng-photonics/
• [Remarks]
  • URL: http://www.research.kobe-u.ac.jp/eng-photonics/