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Nitrogen δ doping into GaAs and development of efficient surface emitting devices

Research Project

Project/Area Number 23656222
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionKobe University

Principal Investigator

KITA Takashi  神戸大学, 大学院・工学研究科, 教授 (10221186)

Co-Investigator(Kenkyū-buntansha) HARADA Yukihiro  神戸大学, 大学院・工学研究科, 助教 (10554355)
Project Period (FY) 2011 – 2012
Project Status Completed (Fiscal Year 2012)
Budget Amount *help
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Keywords不純物 / GaAs / 窒素ペア / 光子放出
Research Abstract

Dilute impurity doping in semiconductors can be applied to fabricate ultimately uniform quantum dots because of their unique electronic structure. These dots are expected to be used in devices based on the interactions between excitons and photons. We developed a novel technique of nitrogen delta-doping into GaAs and clarify the optical properties of the exciton fine structure bound to nitrogen pairs. Furthermore, the device structure achieving efficient photon emission has been proposed.

Report

(3 results)
  • 2012 Annual Research Report   Final Research Report ( PDF )
  • 2011 Research-status Report
  • Research Products

    (47 results)

All 2013 2012 2011 Other

All Journal Article (13 results) (of which Peer Reviewed: 13 results) Presentation (32 results) (of which Invited: 3 results) Remarks (2 results)

  • [Journal Article] Effects of Pumping on Propagation Velocities of Confined Exciton Polaritons in GaAs/AlxGa1-xAs Double Heterostructure Thin Films Under Resonant and Non-Resonant Probe Conditions2013

    • Author(s)
      O. Kojima, S. Ohta, T. Kita, and T. Isu
    • Journal Title

      J. Appl. Phys.

      Volume: Vol. 113 Issue: 1

    • DOI

      10.1063/1.4772717

    • NAID

      120005301743

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Enhancement of Optical Anisotropy by Interconnection Effect along Growth Direction in Multistacked Quantum Dots2013

    • Author(s)
      H. Tanaka, O. Kojima, T. Kita,and K. Akahane
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: Vol. 52 Issue: 1R Pages: 012001-012001

    • DOI

      10.7567/jjap.52.012001

    • NAID

      40019557209

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Carrier Dynamics of the Intermediate State in InAs/GaAs Quantum Dots Coupled in a Photonic Cavity under Two-Photon Excitation2012

    • Author(s)
      T. Kita, T. Maeda, and Y. Harada
    • Journal Title

      Phys. Rev. B

      Volume: Vol. 86 Issue: 3

    • DOI

      10.1103/physrevb.86.035301

    • NAID

      120005465536

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Extremely Uniform Bound Exciton States in Nitrogen δ-doped GaAs Studied by Photoluminescence Spectroscopy in External Magnetic Fields2011

    • Author(s)
      Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
    • Journal Title

      J. Appl. Phys.

      Volume: Vol. 110 Issue: 8

    • DOI

      10.1063/1.3654015

    • NAID

      120003609782

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Depolarization Effect on Optical of Exciton States Confined in GaAs Thin Films2011

    • Author(s)
      T. Yamashita, O. Kojima, T. Kita, and T. Isu
    • Journal Title

      J. Appl. Phys.

      Volume: Vol. 110 Issue: 4

    • DOI

      10.1063/1.3624667

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Observation of Phase Shifts in a Vertical Cavity Quantum Dot Switch2011

    • Author(s)
      C. Y. Jin, O.Kojima, T. Kita, O. Wada, and M. Hopkinson
    • Journal Title

      Appl. Phys. Lett.

      Volume: Vol. 98 Issue: 23

    • DOI

      10.1063/1.3596704

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Dephasing of Excitonic Polaritons Confined in GaAs Thin Films2011

    • Author(s)
      O. Kojima, S. Watanabe, T. Kita, O. Wada, and T. Isu
    • Journal Title

      J. Phys. Soc. Jpn

      Volume: Vol. 80, No. 3 Issue: 3 Pages: 034704-034704

    • DOI

      10.1143/jpsj.80.034704

    • NAID

      210000108943

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Interaction Between Conduction-band Edge and Nitrogen-related Localized Levels in Nitrogen δ-doped GaAs2011

    • Author(s)
      Y. Harada, O. Kojima, T. Kita, and O. Wada
    • Journal Title

      Phys. Status Solidi C

      Volume: Vol. 8, No. 2 Issue: 2 Pages: 365-367

    • DOI

      10.1002/pssc.201000515

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Extremely Uniform Bound Exciton States in Nitrogen δ-doped GaAs Studied by Photoluminescence Spectroscopy in External Magnetic Fields2011

    • Author(s)
      Y. Harada
    • Journal Title

      J. Appl. Phys.

      Volume: 110

    • NAID

      120003609782

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Journal Article] Depolarization Effect on Optical of Exciton States Confined in GaAs Thin Film2011

    • Author(s)
      T. Yamashita
    • Journal Title

      J. Appl. Phys.

      Volume: 98

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Journal Article] Observation of Phase Shifts in a Vertical Cavity Quantum Dot Switch2011

    • Author(s)
      C. Y. Jin
    • Journal Title

      Appl. Phys. Lett.

      Volume: 98

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Journal Article] Dephasing of Excitonic Polaritons Confined in GaAs Thin Films2011

    • Author(s)
      O. Kojima
    • Journal Title

      J. Phys. Soc. Jpn.

      Volume: 80

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Journal Article] Interaction Between Conduction-band Edge and Nitrogen-related Localized Levels in Nitrogen δ-doped GaAs2011

    • Author(s)
      Y. Harada
    • Journal Title

      Physica Status Solid C

      Volume: 8 Pages: 365-367

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Presentation] 窒素を高密度デルタドープしたGaAsの磁気光学特性2013

    • Author(s)
      原田幸弘、山本益輝、馬場健、喜多隆
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Final Research Report
  • [Presentation] 窒素を高密度デルタドープしたGaAsの磁気光学特性2013

    • Author(s)
      田幸弘、山本益輝、馬場健、喜多隆
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川
    • Related Report
      2012 Annual Research Report
  • [Presentation] 窒素デルタドーピングによるGaAs電子状態の制御2012

    • Author(s)
      山本益輝、木村航平、原田幸弘、喜多隆
    • Organizer
      第23回光物性研究会
    • Place of Presentation
      大阪市立大学
    • Year and Date
      2012-12-07
    • Related Report
      2012 Final Research Report
  • [Presentation] GaAsエピタキシャル界面への窒素デルタドーピングと超高均一発光2012

    • Author(s)
      喜多隆
    • Organizer
      第42回結晶成長国内会議(NCCG-42)
    • Place of Presentation
      九州大学筑紫キャンパス、特別講演(招待講演)
    • Year and Date
      2012-11-10
    • Related Report
      2012 Final Research Report
  • [Presentation] Control of Electronic Structure of GaAs Using Nitrogen δ-doping Technique2012

    • Author(s)
      M. Yamamoto, K. Kimura, Y. Harada, and T. Kita
    • Organizer
      The17th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Nara
    • Related Report
      2012 Final Research Report
  • [Presentation] 光共振器構造中のInAs/GaAs量子ドットにおける2段階光吸収の増強2012

    • Author(s)
      原田幸弘、前田剛志、喜多隆
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学、松山大学
    • Related Report
      2012 Final Research Report
  • [Presentation] Strong Electron-Hole Correlation in Bound Exciton in Nitrogen δ-Doped GaAs2012

    • Author(s)
      Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
    • Organizer
      The 10th International Conference on Excitonic Processes in Condensed Matter, Nanostructured and Molecular Materials
    • Place of Presentation
      Groningen
    • Related Report
      2012 Final Research Report
  • [Presentation] Extremely Uniform Excitonic States in Nitrogen δ-Doped GaAs2012

    • Author(s)
      Y. Harada, Tand T. Kita
    • Organizer
      International Conference on Optical, Optoelectronic and Photonic Materials and Applications
    • Place of Presentation
      Nara(招待講演)
    • Related Report
      2012 Final Research Report
  • [Presentation] III-V族量子構造を用いたナノフォトニクス応用2012

    • Author(s)
      喜多隆
    • Organizer
      シリコン・フォトニクス時限研究専門委員会第17回研究会
    • Place of Presentation
      神戸大学(招待講演)
    • Related Report
      2012 Final Research Report
  • [Presentation] Delocalization ofElectronic States Formed by Nitrogen Pairs in GaAs2012

    • Author(s)
      M. Yamamoto, K. Kimura, Y. Harada, and T. Kita
    • Organizer
      31th Electronic Materials Symposium
    • Place of Presentation
      Izu
    • Related Report
      2012 Final Research Report
  • [Presentation] 原田幸弘"GaAsエピタキシャル界面への窒素のデルタドーピングと高均一発光特性2012

    • Author(s)
      喜多隆
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学、15p-E1-7(招待講演)
    • Related Report
      2012 Final Research Report
  • [Presentation] Control of Electronic Structure of GaAs Using Nitrogen δ-doping Technique2012

    • Author(s)
      M. Yamamoto, K. Kimura, Y. Harada, and T. Kita
    • Organizer
      The17th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Nara
    • Related Report
      2012 Annual Research Report
  • [Presentation] Strong Electron-Hole Correlation in Bound Exciton in Nitrogen δ-Doped GaAs2012

    • Author(s)
      Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
    • Organizer
      The 10th International Conference on Excitonic Processes in Condensed Mattsr, Nanostructured and Molecular Materials
    • Place of Presentation
      Groningen
    • Related Report
      2012 Annual Research Report
  • [Presentation] Extremely Uniform Excitonic States in Nitrogen δ-Doped GaAs2012

    • Author(s)
      Y. Harada and T. Kita
    • Organizer
      International Conference on Optical, Optoelectronic and Photonic Materials and Applications
    • Place of Presentation
      Nara
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] 窒素デルタドーピングによるGaAs電子状態の制御2012

    • Author(s)
      山本益輝、木村航平、 原田幸弘、喜多隆
    • Organizer
      第23回光物性研究会
    • Place of Presentation
      大阪
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaAsエピタキシャル界面への窒素デルタドーピングと超高均一発光2012

    • Author(s)
      喜多隆
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      福岡
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] 光共振器構造中のInAs/GaAs量子ドットにおける2段階光吸収の増強2012

    • Author(s)
      原田幸弘、前田剛志、喜多隆
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      松山
    • Related Report
      2012 Annual Research Report
  • [Presentation] III-V族量子構造を用いたナノフォトニクス応用2012

    • Author(s)
      喜多隆
    • Organizer
      シリコン・フォトニクス時限研究専門委員会第17回研究会
    • Place of Presentation
      神戸
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Delocalization of Electronic States Formed by Nitrogen Pairs in GaAs2012

    • Author(s)
      M. Yamamoto, K. Kimura, Y. Harada, and T. Kita
    • Organizer
      31th Electronic Materials Symposium
    • Place of Presentation
      Izu
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaAsエピタキシャル界面への窒素のデルタドーピングと高均一発光特性2012

    • Author(s)
      喜多隆
    • Organizer
      第59回応用物理学関係連合講演会(招待講演)
    • Place of Presentation
      東京
    • Related Report
      2011 Research-status Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子における励起子一格子相互作用2011

    • Author(s)
      原田幸弘、久保輝宜、井上知也、小島磨、喜多隆
    • Organizer
      第22回光物性研究会(2011)
    • Place of Presentation
      熊本大学
    • Related Report
      2012 Final Research Report
  • [Presentation] Effect of Capping Layer Growth on Bound Exciton Luminescence in Nitrogen δ-Doped GaAs2011

    • Author(s)
      Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
    • Organizer
      2011 International Conference on Solid State Devices and Materials, Aichi
    • Place of Presentation
      Aichi
    • Related Report
      2012 Final Research Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子分子の磁気光学特性2011

    • Author(s)
      原田幸弘、久保輝宜、井上知也、小島磨、喜多隆
    • Organizer
      日本物理学会2011年秋季大会、
    • Place of Presentation
      富山大学、21pPSA-37
    • Related Report
      2012 Final Research Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子のフォノンサイドバンド発光2011

    • Author(s)
      原田幸弘、久保輝宜、井上知也、小島磨、喜多隆
    • Organizer
      第72回応用物理学関係連合講演会
    • Place of Presentation
      山形大学
    • Related Report
      2012 Final Research Report
  • [Presentation] Capping Layer Dependence of Bound Exciton Luminescence in Nitrogen δ-Doped GaAs2011

    • Author(s)
      Y. Harada, T.Kubo, T. Inoue, O. Kojima, and T. Kita
    • Organizer
      30th Electronic Materials Symposium
    • Place of Presentation
      Biwako
    • Related Report
      2012 Final Research Report
  • [Presentation] Diamagnetic Shift of Exciton Bound to the Nitrogen Pairs in GaAs2011

    • Author(s)
      Y. Harada, T. Kubo, T. Inoue, O. Kojima, T. Kita
    • Organizer
      38th International Symposium on Compound Semiconductors
    • Place of Presentation
      Germany
    • Related Report
      2012 Final Research Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子における励起子一格子相互作用2011

    • Author(s)
      原田幸弘
    • Organizer
      第22回光物性研究会
    • Place of Presentation
      熊本
    • Related Report
      2011 Research-status Report
  • [Presentation] Effect of Capping Layer Growth on Bound Exciton Luminescence in Nitrogen δ-Doped GaAs2011

    • Author(s)
      Y. Harada
    • Organizer
      2011 International Conference on Solid State Devices and Materials
    • Place of Presentation
      名古屋
    • Related Report
      2011 Research-status Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子分子の磁気光学特性2011

    • Author(s)
      原田幸弘
    • Organizer
      日本物理学会2011年秋季大会
    • Place of Presentation
      富山
    • Related Report
      2011 Research-status Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子のフォノンサイドバンド発光2011

    • Author(s)
      原田幸弘
    • Organizer
      第72回応用物理学関係連合講演会
    • Place of Presentation
      山形
    • Related Report
      2011 Research-status Report
  • [Presentation] Capping Layer Dependence of Bound Exciton Luminescence in Nitrogen δ-Doped GaAs2011

    • Author(s)
      Y. Harada
    • Organizer
      第30回電子材料シンポジウム
    • Place of Presentation
      滋賀
    • Related Report
      2011 Research-status Report
  • [Presentation] Diamagnetic Shift of Exciton Bound to the Nitrogen Pairs in GaAs2011

    • Author(s)
      Y. Harada
    • Organizer
      38th International Symposium on Compound Semiconductors
    • Place of Presentation
      Berlin
    • Related Report
      2011 Research-status Report
  • [Remarks]

    • URL

      http://www.research.kobe-u.ac.jp/eng-photonics/

    • Related Report
      2012 Final Research Report
  • [Remarks]

    • URL

      http://www.research.kobe-u.ac.jp/eng-photonics/

    • Related Report
      2011 Research-status Report

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Published: 2011-08-05   Modified: 2019-07-29  

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