Nitrogen δ doping into GaAs and development of efficient surface emitting devices
| Project/Area Number |
23656222
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kobe University |
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Principal Investigator |
KITA Takashi 神戸大学, 大学院・工学研究科, 教授 (10221186)
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| Co-Investigator(Kenkyū-buntansha) |
HARADA Yukihiro 神戸大学, 大学院・工学研究科, 助教 (10554355)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 不純物 / GaAs / 窒素ペア / 光子放出 |
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| Research Abstract |
Dilute impurity doping in semiconductors can be applied to fabricate ultimately uniform quantum dots because of their unique electronic structure. These dots are expected to be used in devices based on the interactions between excitons and photons. We developed a novel technique of nitrogen delta-doping into GaAs and clarify the optical properties of the exciton fine structure bound to nitrogen pairs. Furthermore, the device structure achieving efficient photon emission has been proposed.
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Report
(3 results)
Research Products
(47 results)
