| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Research Abstract |
New polarizers with high performance have been successively obtained. (1) Terahertz region: A new fabrication method utilizing the thermal imprinting was employed to fabricate the polarizer. The method is simple and applicable for the mass production. The insertion loss of less than 0.2dB with an extinction ratio as high as 50dB have been obtained at the frequency of 2THz, showing that the goal of the project has been reached. (2) Mid-infrared region: Triplicated subwavelength metal films for the polarizer are formed on both sides of a 0.3mm-thick silicon wafer. The nsertion loss of 1.0dB with an extinction ratio of 32dB have been obtained at the wavelength of 18um, showing that data close to the goal have been obtained. A new polarizer structure having an anti-reflection effect to the silicon substrate was newly proposed, which is promising to attain the goal.
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