| Project/Area Number |
23656240
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Nara Institute of Science and Technology |
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Principal Investigator |
KAWAGUCHI Hitoshi 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (40211180)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | スピン注入 / スピン緩和 / 円偏光レーザ発振 / 円偏光スイッチ / (110)量子井戸 / フォトニックデバイス / スピン面発光半導体レーザ / マイクロポスト / 電磁誘導透過 |
|---|
| Research Abstract |
Creation of optical functional devices using electron-spin controlled semiconductor structures will develop new types of optical and quantum-electronic signal processing. We fabricated vertical-cavity surface-emitting lasers with long electron-spin relaxation times and achieved lasing with a circular polarization over a wide wavelength range. We also achieved fast switching between right and left circular polarizations with nano-size structures. Moreover, we grew quantum wells operating at the optical communication wavelength and evaluated their electron-spin relaxation times.
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