| Project/Area Number |
23656380
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Physical properties of metals
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
OHNO Yutaka 東北大学, 金属材料研究所, 准教授 (80243129)
TOKUMOTO Yuki 東北大学, 金属材料研究所, 助教 (20546866)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2013)
|
| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 半導体物性 / 転位ナノ物性 / 物性制御 / 金属不純物 / 半導体 / 磁気特性 / 転位 |
|---|
| Research Abstract |
Development of nano-clusters with ferromagnetic impurities along a dislocation in silicon was attempted in order to explore a new magnetic device according to the established knowledge of defect-impurity interaction in semiconductors. MnSi1.75 layers with a thickness of about 1 micron were formed in the surface region of heavily-dislocated Si.
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