Formation of bulk heterojunction and the photovoltaic properties based on Si and Ge nanomaterials
| Project/Area Number |
23656414
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Structural/Functional materials
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| Research Institution | Tohoku University |
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Principal Investigator |
WATANABE Akira 東北大学, 多元物質科学研究所, 准教授 (40182901)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
|
| Budget Amount *help |
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | センサー材料 / 光機能材料 / 光電変換 / ナノSi / ナノGe / バルクヘテロジャンクション |
|---|
| Research Abstract |
The global energy problem requires the spread of solar cells, which can also decrease the environmental impact. A new manufacturing process which increases the productivity and reduces the energy consumption compared to conventional processes is desired. The recent progress of functional nano-materials provides a possibility of a new wet process technology for the innovation of electronic device manufacturing. In this study, semiconducting films were prepared by laser processing of organogermanium nanocluster/silicon hybrid films, and the photovoltaic properties of the heterojunction devices were investigated.
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Report
(3 results)
Research Products
(25 results)
