| Project/Area Number |
23656421
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Structural/Functional materials
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| Research Institution | Tohoku University |
|---|
Principal Investigator |
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| Project Period (FY) |
2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
|
|---|
| Keywords | アモルファス材料 / ガラス転移 / 自己治癒性 / ナノインプリント |
|---|
| Research Abstract |
Pd-Cu-Ge metallic thin films of about 60 nm in thickness were deposited on Si wafers by vacuum evaporation with electric resistance heating. Glass transition temperature and crystallization temperature of those thin films were determined by measurement of electric resistance upon heating with four-probe potentiometric method. After heating the films up to crystallization temperatures, the thickness, density and surface roughness changed drastically. The density increased on crystalliation. The thickness decreased in corresponding to the increase of density. The roughness also increased on crytallization.
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