Development of homogeneous solid electrolyte/electrode structureby chemical vapor deposition method
| Project/Area Number |
23656426
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Structural/Functional materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
SHINOZAKI Kazuo 東京工業大学, 大学院・理工学研究科, 教授 (00196388)
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| Co-Investigator(Kenkyū-buntansha) |
SAKURAI Osamu 東京工業大学, 大学院・理工学研究科, 准教授 (20108195)
SHIOTA Tadashi 東京工業大学, 大学院・理工学研究科, 助教 (40343165)
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| Co-Investigator(Renkei-kenkyūsha) |
WAKIYA Naoki 静岡大学, 工学部, 教授 (40251623)
KIGUCHI Takanori 東北大学, 金属材料研究所, 准教授 (70311660)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 燃料電池材料 / CVD 法低温合成 / 燃料電池 / Gd添加CeO2 / 減圧CVD法 / 常圧CVD法 / 低温合成 / CVD法 / GDC / SDC |
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| Research Abstract |
Typical fabrication process of making solid electrolyte for the fuel cell is sintering. However it brings the inhomogeneity of cations from the in sufficient mixing of the raw materials and local diffusion during the sintering and also during long time running of power generation. These inhomogeneity is enhanced the large amount of trivalent cation doping, such as 20-30 at%. We proposed the chemical vapor deposition (CVD) using Ce(EtCp)_4 (Ce (C_5H_4C_2H_5)_4) and Gd(EtCp)_3 (Gd(C_5H_4C_2H_5)_3) as the source materials. In this research, we determined the optimum condition of these raw materials for CVD process for low-pressure coldwall-type-CVD apparatus. We succeeded to fabricate the columnar type GDC film on Al_2O_3, SiO_2/Si substrates. It was found that the film was grown at around 300℃ and has columnar structure that means no grain boundary in the out of plane direction. Since thinner thickness of the film and almost no grain boundary along the out of plane direction, oxide ion can be able to diffuse even at 180℃ by AC measurement. New type atmospheric pressure CVD apparatus was developed to grow the film with very fast growth rate. We also tried to fabricated the porous electrodes with dense surface layer for the anode: Ni-GDC and the cathode: LaSrCoO_3-GDC. GDC thin films by low pressure CVD were fabricated on the porous electrodes, and tried to generate the electric power in the H_2-O_2 system. Since the power generation test system is preliminary, but we have several important point to realize the CVD derived electrolyte system.
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Report
(3 results)
Research Products
(20 results)
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[Presentation] CVD法によるGd2O3添加CeO2電解質薄膜の低温製膜とその電気特性2012
Author(s)
田中宏樹, Jeffrey Cross, 塩田忠, 篠崎和夫, 櫻井修, 木口賢紀, 脇谷尚樹, 東慎太郎
Organizer
日本セラミックス協会2012年年会講演予稿集, 3D08, P.292
Place of Presentation
京都大学, 京都
Related Report
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[Presentation] CVD 法によるGd 添加CeO2電解質薄膜形成用Ni-電解質混合導電基板の作製と特性2011
Author(s)
門馬征史, 田中宏樹, 早乙女遼一, 木口賢紀, 脇谷尚樹, Cross Jeffrey, 櫻井 修, 篠崎和夫
Organizer
第27回日本セラミックス協会関東支部研究発表会講演要旨集, 1C14, P.58
Place of Presentation
静岡大学, 静岡県
Related Report
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