Development of a deep-UV light-emitting device by a novel pulsed laser deposition technique

• Project/Area Number: 23656444
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Material processing/treatments
• Research Institution: Tohoku University
• Principal Investigator: NAKAMURA Takahiro 東北大学, 多元物質科学研究所, 助教 (50400429)
• Project Period (FY): 2011 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
• Keywords: 薄膜プロセス / レーザー / パルスレーザー堆積法 / 深紫外発光素子 / フェムト秒パルスレーザー / 冷凍ターゲット

Research Abstract

Fabrication of a high-quality boron nitride film for a deep-UV light-emitting diode by a novel pulsed laser deposition (PLD) technique combining high-intensity laser pulses with frozen target was investigated. A diamond-like carbon (DLC) film with high sp3 content was prepared by PLD using a frozen benzene target by a newly developed film formation system. Based on the results, a preparation technique of a high-quality boron nitride film for development of a deep-UV light-emitting diode was established.

Research Products

• [Presentation] 冷凍ベンゼンをターゲットとして用いたPLD法によるDLC薄膜の作製とレーザーフルエンス依存性 (2011)
  • Author(s): 武井章生,中村貴宏,佐藤俊一
  • Organizer: 応用物理学関係連合後援会
  • Place of Presentation: 東京
  • Year and Date: 2011-03-16
• [Presentation] 冷凍ベンゼンをターゲットとして用いたPLD法によるa-C:H薄膜の作製 (2010)
  • Author(s): 武井章生,中村貴宏,佐藤俊一
  • Organizer: 応用物理学会東北支部学術講演会
  • Place of Presentation: 盛岡
  • Year and Date: 2010-12-02
• [Remarks]
  • URL: http://satolab.tagen.tohoku.ac.jp/