| Budget Amount *help |
¥27,690,000 (Direct Cost: ¥21,300,000、Indirect Cost: ¥6,390,000)
Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2012: ¥11,960,000 (Direct Cost: ¥9,200,000、Indirect Cost: ¥2,760,000)
Fiscal Year 2011: ¥13,260,000 (Direct Cost: ¥10,200,000、Indirect Cost: ¥3,060,000)
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| Research Abstract |
Electrical manipulation and read-out of quantum states in zero-dimensional nanostructures by nano-gap metal electrodes is expected to bring about innovation in quantum information processing.
In this study, the site- and shape-controlled InAs quantum dots (QDs) were successfully fabricated, which drastically improved the fabrication yield of the functional devices using single QDs. Then, a variety of remarkable properties of the InAs QD transistors were demonstrated, such as QD supercurrent transistors, electrically tunable large g-factors and spin-orbit interaction, and optical pumping of carriers in the terahertz frequency range. These works are opening a way for novel quantum information applications on self-assembled InAs QDs.
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