Interface structure of organic transistors
| Project/Area Number |
23684026
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Condensed matter physics II
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| Research Institution | Osaka University |
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Principal Investigator |
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| Project Period (FY) |
2011-11-18 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
|
| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2012: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | 表面・界面物性 / 物性実験 / 固液界面 / 放射光 / 有機デバイス / イオン液体 |
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| Research Abstract |
Current technology to fabricate electronic devices is based on Si. However, recent study revealed that organic semiconductors can be utilized for making devices with totally different characteristics, such as lightweight, flexible devices. In this study, we performed structural study of interfaces to improve organic devices. High resolution, non-destructive measurements of interfaces were realized by using surface synchrotron X-ray diffraction technique. We clarified two interface structures; one is the surface structure of organic semiconductor tetracene, and the other is the electric double layer structure made of ionic liquid. The latter includes applied electric voltage dependence of the structure. Layered arrangement of the anions/cations was observed, and the ionic arrangement was controlled by the applied voltage.
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Report
(4 results)
Research Products
(48 results)
