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Elucidation of efficiency droop mechanism in nitride semiconductorbased light emitting devices by scanning near field optical microscopy

Research Project

Project/Area Number 23686003
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionKyoto University

Principal Investigator

KANETA Akio  京都大学, 大学院・工学研究科, 助教 (80372572)

Project Period (FY) 2011 – 2012
Project Status Completed (Fiscal Year 2012)
Budget Amount *help
¥23,660,000 (Direct Cost: ¥18,200,000、Indirect Cost: ¥5,460,000)
Fiscal Year 2012: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2011: ¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
Keywords走査プローブ顕微鏡 / 半導体物性 / マルチモード近接場分光 / 過渡レンズ法 / 効率ドループ
Research Abstract

To clarify main factor of efficiency droop phenomena, we performed PL and time-resolved PL measurement using a scanning near field optical microscope. For the blue sample , although carriers overflow from localization centers under the high carrier density, the capture to nonradiative recombination centers (NRCs) hardly takes place because the potential barriers are formed around the NRCs. On the other hand, for the green sample, the increase of carrier density enhances the diffusion from the strong PL domains to the weak ones corresponding to high In composition area, where a large number of NRCs are distributed in association with threading dislocations. Such carrier recombination dynamics was found to be a major mechanism of the efficiency droop in the green sample due to the increase of both carrier lifetime and number of threading dislocations.

Report

(3 results)
  • 2012 Annual Research Report   Final Research Report ( PDF )
  • 2011 Annual Research Report
  • Research Products

    (65 results)

All 2013 2012 2011 Other

All Journal Article (13 results) (of which Peer Reviewed: 12 results) Presentation (45 results) (of which Invited: 1 results) Remarks (3 results) Patent(Industrial Property Rights) (4 results) (of which Overseas: 3 results)

  • [Journal Article] Complex strain distribution in individual facetted InGaN/GaN nano-columnar heterostructures2013

    • Author(s)
      R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi and K. Kishino
    • Journal Title

      Optical Materials Express

      Volume: 3 Pages: 47-53

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {20-21} GaN substrate probed by scanning near-field optical microscopy2012

    • Author(s)
      A. Kaneta, Y. S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno and T. Nakamura
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 10 Pages: 1-3

    • DOI

      10.1143/apex.5.102104

    • NAID

      10031117546

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Instrumentation for dual-probe scanning near-field optical microscopy2012

    • Author(s)
      A. Kaneta, R. Fujimoto, T. Hashimoto, K. Nishimura, M. Funato and Y. Kawakami
    • Journal Title

      Review of scientific instruments

      Volume: 83 Issue: 8 Pages: 1-11

    • DOI

      10.1063/1.4737883

    • NAID

      120005439698

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Interference of the surface plasmon polaritons with an Ag waveguide probed by dual-probe scanning near-field optical microscopy2012

    • Author(s)
      R. Fujimoto, A. Kaneta, K. Okamoto, M. Funato and Y. Kawakami
    • Journal Title

      Applied Surface Science

      Volume: 258 Issue: 19 Pages: 7372-7376

    • DOI

      10.1016/j.apsusc.2012.04.034

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates2012

    • Author(s)
      Y. S. Kim, A. Kaneta, M. Funato and Y. Kawakami
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 112 Pages: 71-74

    • Related Report
      2012 Annual Research Report
  • [Journal Article] Lateral charge carrier diffusion in InGaN quantum wells2012

    • Author(s)
      J. Danhof, H. M. Solowan, U. T. Schwarz, A. Kaneta, Y. Kawakami, D. Schiavon, T. Meyer and M. Peter
    • Journal Title

      physica status solidi (B)

      Volume: 249 Pages: 480-484

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of photo-induced microstructure embedded inside ZnO crystal2012

    • Author(s)
      Y. Ishikawa, Y. Shimotsuma, A. Kaneta, M. Sakakura, M. Nishi, K. Miura, K. Hirao and Y. Kawakami
    • Journal Title

      Proceedings of SPIE

      Volume: 8243 Pages: 82430N-82430N

    • DOI

      10.1117/12.908190

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Lateral charge carrier diffusion in InGaN quantum wells2011

    • Author(s)
      J.Danhof, H.M.Solowan, U.T.Schwarz, A.Kaneta, Y.Kawakami, D.Schiavon, T.Meyer, M.Peter
    • Journal Title

      Physica Status Solidi B

      Volume: 249 Issue: 3 Pages: 480-484

    • DOI

      10.1002/pssb.201100476

    • Related Report
      2012 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical gain spectroscopy of a semipolar {20-21}-oriented green InGaN laser diode2011

    • Author(s)
      Y. S. Kim, A. Kaneta, M. Funato, Y. Kawakami, T. Kyono, M. Ueno and T. Nakamura
    • Journal Title

      Appl. Phys. Exp.

      Volume: 4 Issue: 5 Pages: 1-3

    • DOI

      10.1143/apex.4.052103

    • Related Report
      2012 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Time-of-flight measurements of charge carrier diffusion in In_xGa_<1-x>N/GaN quantum wells2011

    • Author(s)
      J. Danhof, U. T. Schwarz, A. Kaneta and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 84 Issue: 3 Pages: 1-5

    • DOI

      10.1103/physrevb.84.035324

    • Related Report
      2012 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Single mode emission and non-stochastic laser system based on disordered point-sized structures : toward a tuneable random laser2011

    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, K.Okamoto, Y.Kawakami, A.Kikuchi, K.Kishino
    • Journal Title

      Optics Express

      Volume: 19 Pages: 9262-9268

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Micromirror arrays to assess luminescent nano-objects2011

    • Author(s)
      Y. Kawakami, A. Kanai, A. Kaneta, M. Funato, A. Kikuchi and K. Kishino
    • Journal Title

      Review of Scientific Instruments

      Volume: 82 Issue: 5

    • DOI

      10.1063/1.3589855

    • NAID

      120004873774

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Time-resolved photoluminescence of Al-rich AlGaN/AlN quantum wells under selective excitation2011

    • Author(s)
      Y.Iwata, T.Oto, A.Kaneta, R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Physica Status Solidi C

      Volume: 8 Issue: 7-8 Pages: 2191-2193

    • DOI

      10.1002/pssc.201001083

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Presentation] InGaN/GaN SQW における非輻射再結合のキャリアダイナミクス2013

    • Author(s)
      井上航平, 金田昭男, 船戸 充,川上養一,岡本晃一
    • Organizer
      第60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-30
    • Related Report
      2012 Final Research Report
  • [Presentation] ナノ光励起による窒化物半導体の発光機構解明と制御へのアプローチ2013

    • Author(s)
      川上養一, 金田昭男, 船戸 充
    • Organizer
      第60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-27
    • Related Report
      2012 Final Research Report
  • [Presentation] 緑色発光 InGaN 量子井戸の近接場光学分光2013

    • Author(s)
      金田昭男, 船戸 充, 川上養一
    • Organizer
      第5回文部科学省「最先端の光の創成を目指したネットワーク研究拠点プログラム」シンポジウム
    • Place of Presentation
      日本科学未来館
    • Year and Date
      2013-01-11
    • Related Report
      2012 Final Research Report
  • [Presentation] Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates2012

    • Author(s)
      Y. S. Kim, A. Kaneta, M. funato, Y. Kawakami, T. Miyoshi, S. Nagahama
    • Organizer
      電子情報通信学会 レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪市立大学
    • Year and Date
      2012-11-30
    • Related Report
      2012 Final Research Report
  • [Presentation] Nanoscopic PL properties in green emitting InGaN single quantum well on {20-21} GaN substrate probed by scanning near field optical microscopy2012

    • Author(s)
      A. Kaneta, Y. S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno and T. Nakamura
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      2012-10-16
    • Related Report
      2012 Annual Research Report 2012 Final Research Report
  • [Presentation] 緑色発光{20-21}GaN 基板上 InGaN量子井戸の近接場顕微発光測定2012

    • Author(s)
      金田昭男, 金潤碩, 船戸 充, 川上養一, 塩谷陽平, 京野孝史, 上野昌紀, 中村孝夫
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学
    • Year and Date
      2012-09-12
    • Related Report
      2012 Final Research Report
  • [Presentation] Contribution of low inhomogeneous broadening to the optical gain of a (0001) oriented InGaN-based green laser diode2012

    • Author(s)
      金 潤碩, 金田昭男,船戸 充, 川上養一
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学
    • Year and Date
      2012-09-12
    • Related Report
      2012 Final Research Report
  • [Presentation] Recombination Dynamics in InGaN Single Quantum Wells by Scanning Near-field Optical Microscopy2012

    • Author(s)
      A. Kaneta, M. Funato and Y. Kawakami
    • Organizer
      The 2nd Sweden-Japan Workshop on Nanophotonics and Related Technologies
    • Place of Presentation
      Kista, Sweden
    • Year and Date
      2012-06-19
    • Related Report
      2012 Final Research Report
  • [Presentation] Optical Gain Properties of (0001) Oriented InGaN-Based Green Laser Diodes with Low Threshold Current Density2012

    • Author(s)
      Y. S. Kim, A. Kaneta, M. Funato, Y. Kawakami, T. Miyoshi and S. Nagahama
    • Organizer
      16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
    • Place of Presentation
      Paradise Hotel Busan, Busan, Korea
    • Year and Date
      2012-05-22
    • Related Report
      2012 Final Research Report
  • [Presentation] 窒化アルミニウムにおける静水圧変形ポテンシャルの同定2012

    • Author(s)
      石井良太, 金田昭男, 船戸充, 川上養一
    • Organizer
      第59回応用物理学会関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス早稲田中・高等学校興風館
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] 近接場分光による局在・輻射・非輻射再結合ダイナミクスの評価2012

    • Author(s)
      川上養一,船戸 充,金田昭男
    • Organizer
      第59回応用物理学会関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス, 早稲田中・高等学校 興風館
    • Year and Date
      2012-03-15
    • Related Report
      2012 Final Research Report
  • [Presentation] 近接場分光による局在・輻射・非輻射再結合ダイナミクスの評価2012

    • Author(s)
      川上養一, 船戸充, 金田昭男
    • Organizer
      第59回応用物理学会関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス早稲田中・高等学校興風館
    • Year and Date
      2012-03-15
    • Related Report
      2011 Annual Research Report
  • [Presentation] Recombination Dynamics in Nitride Semiconductors by Scanning Near-field Optical Microscopy2012

    • Author(s)
      Y. Kawakami, A. Kaneta and M. Funato
    • Organizer
      5th GCOE Intern. Symp. on Photonics and Electronics Science and Engineering
    • Place of Presentation
      Katsura-Campus, Kyoto University, Kyoto, Japan
    • Year and Date
      2012-03-08
    • Related Report
      2012 Final Research Report
  • [Presentation] Recombination Dynamics in Nitride Semiconductors by Scanning Near-field Optical Microscopy2012

    • Author(s)
      Y.Kawakami, A.Kaneta, M.Funato
    • Organizer
      5th GCOE Intern.Symp.on Photonics and Electronics Science and Engineering
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2012-03-08
    • Related Report
      2011 Annual Research Report
  • [Presentation] Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001) LDs2011

    • Author(s)
      Y. Kim, A. Kaneta, M. Funato, Y. Kawakami, T. Kyono, M. Ueno and T. Nakamura
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学
    • Year and Date
      2011-11-18
    • Related Report
      2012 Final Research Report
  • [Presentation] 窒化アルミニウムの電子状態に対する歪みの効果2011

    • Author(s)
      石井良太, 金田昭男, ライアンバナル, 船戸充, 川上養一
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学
    • Year and Date
      2011-11-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001)LDs2011

    • Author(s)
      Y.Kim, A.Kaneta, M.Funato, Y.Kawakami, T.Kyono, M.Ueno, T.Nakamura
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学
    • Year and Date
      2011-11-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] 近接場顕微分光測定による InGaN量子井戸中のキャリア拡散が効率ドループ現象へ与える影響2011

    • Author(s)
      金田昭男,橋谷 亨,船戸 充,川上養一
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
    • Related Report
      2012 Final Research Report
  • [Presentation] 一軸性応力下におけるAlN薄膜のPLスペクトル2011

    • Author(s)
      石井良太, 金田昭男, R.G.Banal, 船戸充, 川上養一
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] 近接場顕微分光測定によるInGaN量子井戸中のキャリア拡散が効率ドループ現象へ与える影響2011

    • Author(s)
      金田昭男, 橋谷亨, 船戸充, 川上養一
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] Local carrier dynamics in InGaN quantum wells studied by scanning near-fi eld optical microscopy2011

    • Author(s)
      A. Kaneta, M. Funato and Y. Kawakami
    • Organizer
      2011 Optics+Photonics
    • Place of Presentation
      San Diego Convention Center, San Diego Marriott Marquis and Marina, California, USA
    • Year and Date
      2011-08-25
    • Related Report
      2012 Final Research Report
  • [Presentation] Local carrier dynamics in InGaN quantum wells studied by scanning near-field optical microscopy2011

    • Author(s)
      A.Kaneta, M.Funato, Y.Kawakami
    • Organizer
      2011 Optics+Photonics
    • Place of Presentation
      California, USA(Invited)
    • Year and Date
      2011-08-25
    • Related Report
      2011 Annual Research Report
  • [Presentation] Lateral charge carrier diffusion in InGaN quantum wells2011

    • Author(s)
      J. Danhof, U. T. Schwarz, A. Kaneta and Y. Kawakami
    • Organizer
      9th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-12
    • Related Report
      2012 Final Research Report
  • [Presentation] Lateral charge carrier diffusion in InGaN quantum wells2011

    • Author(s)
      J.Danhof, U.T.Schwarz, A.Kaneta, Y.Kawakami
    • Organizer
      9th Intern.Conf.on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-12
    • Related Report
      2011 Annual Research Report
  • [Presentation] Well width dependence of the Mott density in Al-rich AlGaN/AlN quantum wells assessed by time-resolved photoluminescence2011

    • Author(s)
      Y.Iwata, T.Oto, A.Kaneta, R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      9th Intern.Conf.on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-12
    • Related Report
      2011 Annual Research Report
  • [Presentation] Impact of internal quantum efficiency on the droop phenomena studied by scanning near-field optical microscopy in InGaN single quantum wells2011

    • Author(s)
      A. Kaneta, A. Hashiya, M. Funato and Y, Kawakami
    • Organizer
      9th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-11
    • Related Report
      2012 Final Research Report
  • [Presentation] Impact of internal quantum efficiency on the droop phenomena studied by scanning near-field optical microscopy in InGaN single quantum wells2011

    • Author(s)
      A.Kaneta, A.Hashiya, M.Funato, Y.Kawakami
    • Organizer
      9th Intern.Conf.on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001) LDs2011

    • Author(s)
      Y. Kim, A. Kaneta, M. Funato, Y. Kawakami, T. Kyono, M. Ueno, and T. Nakamura
    • Organizer
      30th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Year and Date
      2011-06-29
    • Related Report
      2012 Final Research Report
  • [Presentation] Uniaxial Stress Dependence of the Exci tonic Transition in AlN2011

    • Author(s)
      R.Ishii, A.Kaneta, R.G Banal, M.Funato, Y.Kawakami
    • Organizer
      30th Electronic Materials Symposium
    • Place of Presentation
      Shiga, Japan
    • Year and Date
      2011-06-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001)LDs2011

    • Author(s)
      Y.Kim, A.Kaneta, M.Funato, Y.kawakami, T.Kyono, M.Ueno, T.Nakamura
    • Organizer
      30th Electronic Materials Symposium
    • Place of Presentation
      Shiga, Japan
    • Year and Date
      2011-06-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] InGaN/GaN quantum disks and random lasing : toward a quantum dot laser system based on disordered media2011

    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
    • Organizer
      E-MRS
    • Place of Presentation
      Nice, France
    • Year and Date
      2011-05-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] Optical Gain Properties of (0001) Oriented InGaN-Based Green Laser Diodes with Low Threshold Current Density

    • Author(s)
      Y. S. Kim, A. Kaneta, fm, Y. Kawakami, T. Miyoshi and S. Nagahama
    • Organizer
      16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Busan, Korea
    • Related Report
      2012 Annual Research Report
  • [Presentation] Recombination Dynamics in InGaN Single Quantum Wells by Scanning Near-field Optical Microscopy

    • Author(s)
      A. Kaneta
    • Organizer
      The 2nd Sweden-Japan Workshop on Nanophotonics and Related Technologies
    • Place of Presentation
      Kista, Sweden
    • Related Report
      2012 Annual Research Report
  • [Presentation] Determination of the deformation potentials in aluminum nitride: Breakdown of the quasicubic approximation in AlN as well as GaN

    • Author(s)
      R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Hydrostatic and uniaxial deformation potentials in aluminum nitride: Breakdown of the quasicubic approximation in AlN

    • Author(s)
      R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
    • Organizer
      31st Electronic Materials Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka
    • Related Report
      2012 Annual Research Report
  • [Presentation] 窒化アルミニウムにおける一軸性変形ポテンシャルの同定

    • Author(s)
      石井良太,金田昭男,船戸 充,川上養一
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 緑色発光{20-21}GaN基板上InGaN量子井戸の近接場顕微発光測定

    • Author(s)
      金田昭男, 金 潤碩, 船戸 充, 川上養一, 塩谷陽平, 京野孝史, 上野昌紀, 中村孝夫
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Contribution of low inhomogeneous broadening to the optical gain of a (0001) oriented InGaN-based green laser diode

    • Author(s)
      金 潤碩, 金田昭男,船戸 充, 川上養一
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates

    • Author(s)
      Y. S. Kim, A. Kaneta, M. Funato, Y. Kawakami, T. Miyoshi, S. Nagahama
    • Organizer
      電子情報通信学会 レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪市立大学, 大阪府
    • Related Report
      2012 Annual Research Report
  • [Presentation] 緑色発光InGaN量子井戸の近接場光学分光

    • Author(s)
      金田昭男, 船戸 充, 川上養一
    • Organizer
      第5回文部科学省「最先端の光の創成を目指したネットワーク研究拠点プログラム」シンポジウム
    • Place of Presentation
      日本科学未来館, 東京都
    • Related Report
      2012 Annual Research Report
  • [Presentation] 共焦点顕微鏡による高Al組成AlGaN/AlN量子井戸のPLマッピング

    • Author(s)
      岩田佳也, 金田昭男, ライアン バナル, 船戸 充, 川上養一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] InGaN/GaN量子井戸面内におけるキャリアの伝播・再結合過程の観測

    • Author(s)
      西川恭平,金田昭男,船戸 充,川上養一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 脱励起光下顕微フォトルミネッセンスによるInGaN/GaN量子井戸のキャリア再結合機構の評価

    • Author(s)
      田中優也,金田昭男,船戸 充,川上養一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] InGaN/GaN SQWにおける非輻射再結合のキャリアダイナミクス

    • Author(s)
      井上航平, 金田昭男, 船戸 充,川上養一,岡本晃一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] ナノ光励起による窒化物半導体の発光機構解明と制御へのアプローチ

    • Author(s)
      川上養一, 金田昭男, 船戸 充
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Remarks]

    • URL

      http://www.optomater.kuee.kyoto-u.ac.jp/

    • Related Report
      2012 Final Research Report
  • [Remarks] 京都大学 工学研究科 電子工学専攻 量子機能工学講座 光材料物性工学分野

    • URL

      http://www.optomater.kuee.kyoto-u.ac.jp/

    • Related Report
      2012 Annual Research Report
  • [Remarks]

    • URL

      http://www.optomater.kuee.kyoto-u.ac.jp/

    • Related Report
      2011 Annual Research Report
  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2012

    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Filing Date
      2012-01-20
    • Related Report
      2011 Annual Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2011

    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Number
      2010-128252
    • Filing Date
      2011-12-21
    • Related Report
      2011 Annual Research Report
  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2011

    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Filing Date
      2011-12-22
    • Related Report
      2011 Annual Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2011

    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Filing Date
      2011-12-22
    • Related Report
      2011 Annual Research Report
    • Overseas

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Published: 2011-04-06   Modified: 2019-07-29  

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