| Budget Amount *help |
¥26,650,000 (Direct Cost: ¥20,500,000、Indirect Cost: ¥6,150,000)
Fiscal Year 2013: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2012: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
Fiscal Year 2011: ¥12,220,000 (Direct Cost: ¥9,400,000、Indirect Cost: ¥2,820,000)
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| Research Abstract |
We investigated the fabrication of dielectric rod type photonic crystal laser using dilute nitride semiconductor nanostructures. The study was focused on to the growth of the dilute nitride nano-material using molecular bean epitaxy, and its application to photonic crystal device. We could obtain core-shell type GaAs/GaAsN nanowire. Further, the emission wavelength at the near infrared 950 nm was observed by controlling the amount of introduced nitrogen into the GaAsN layer. Introducing the GaInNAs quantum wells into a cavity structure on which rod-type photonic crystal is patterned, we observe close to tenfold enhancement of extracted luminescence efficiency from the surface depending on the correlated variation photonic bandgap.
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