| Budget Amount *help |
¥28,340,000 (Direct Cost: ¥21,800,000、Indirect Cost: ¥6,540,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2012: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2011: ¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000)
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| Research Abstract |
In this research, electron-electron interaction in two-dimensional electron gas in MgZnO/ZnO heterostructures was investigated with applying field-effect gating technique. The heterostructures were grown by molecular-beam epitaxy, whose mobility is now reaching to 800,000cm2V-1s-1. With using cyclotron resonance method, we conclude that the enhancement of the effective mass and g-factor of 2D electrons originates from electron-electron interaction. In addition, a new gating technique with air-gapped structure was applied to MgZnO/ZnO samples, enabling us to reduce 2DEG density with keeping high electron mobility.
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