Research on quantum optical application of novel polar widegap semiconductors
Project/Area Number |
23686010
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Research Category |
Grant-in-Aid for Young Scientists (A)
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Allocation Type | Single-year Grants |
Research Field |
Applied optics/Quantum optical engineering
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Research Institution | Tohoku University |
Principal Investigator |
KATAYAMA Ryuji 東北大学, 金属材料研究所, 准教授 (40343115)
|
Project Period (FY) |
2011-04-01 – 2014-03-31
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥28,600,000 (Direct Cost: ¥22,000,000、Indirect Cost: ¥6,600,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2012: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2011: ¥22,360,000 (Direct Cost: ¥17,200,000、Indirect Cost: ¥5,160,000)
|
Keywords | 量子光学 / 非線形光学 / 窒化ガリウム / 酸化チタン / 分子線エピタキシー / 有機金属気相成長 / スパッタリング / 反応性スパッタリング / 擬似位相整合 / 第二高調波発生 / GaN / 周期的極性反転 |
Research Abstract |
Based on the strong second-order optical nonlinearity and the exciton-photon interaction in wide-gap semiconductors such as nitrides, fundamental technologies for realizing novel quantum optically correlated photon pair sources have been developed, which will be operated via optical parametric down conversion and resonant hyper parametric scattering processes. Especially the successful demonstration of the high-efficiency violet-colored second harmonic generation from a quasi-phase-matched GaN waveguide with a periodic-polarity-inverted structure attested the applicability of this material system to the quantum optical devices.
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Report
(4 results)
Research Products
(68 results)
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[Journal Article] Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs2013
Author(s)
Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
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Journal Title
THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012
Volume: 1566 (1)
Pages: 538-539
DOI
Related Report
Peer Reviewed
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[Journal Article] Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs2012
Author(s)
K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
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Journal Title
Appl. Phys. Express
Volume: 5
Issue: 11
Pages: 111201-111201
DOI
Related Report
Peer Reviewed
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