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Research on quantum optical application of novel polar widegap semiconductors

Research Project

Project/Area Number 23686010
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypeSingle-year Grants
Research Field Applied optics/Quantum optical engineering
Research InstitutionTohoku University

Principal Investigator

KATAYAMA Ryuji  東北大学, 金属材料研究所, 准教授 (40343115)

Project Period (FY) 2011-04-01 – 2014-03-31
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥28,600,000 (Direct Cost: ¥22,000,000、Indirect Cost: ¥6,600,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2012: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2011: ¥22,360,000 (Direct Cost: ¥17,200,000、Indirect Cost: ¥5,160,000)
Keywords量子光学 / 非線形光学 / 窒化ガリウム / 酸化チタン / 分子線エピタキシー / 有機金属気相成長 / スパッタリング / 反応性スパッタリング / 擬似位相整合 / 第二高調波発生 / GaN / 周期的極性反転
Research Abstract

Based on the strong second-order optical nonlinearity and the exciton-photon interaction in wide-gap semiconductors such as nitrides, fundamental technologies for realizing novel quantum optically correlated photon pair sources have been developed, which will be operated via optical parametric down conversion and resonant hyper parametric scattering processes. Especially the successful demonstration of the high-efficiency violet-colored second harmonic generation from a quasi-phase-matched GaN waveguide with a periodic-polarity-inverted structure attested the applicability of this material system to the quantum optical devices.

Report

(4 results)
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Annual Research Report
  • 2011 Annual Research Report
  • Research Products

    (68 results)

All 2014 2013 2012 Other

All Journal Article (14 results) (of which Peer Reviewed: 14 results) Presentation (53 results) (of which Invited: 8 results) Remarks (1 results)

  • [Journal Article] Effect of Sapphire Nitridation and Group-III Source Flow Rate Ratio on In-Incorporation into InGaN Grown by MOVPE2014

    • Author(s)
      J. H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka
    • Journal Title

      Joumal of Nanoscience and Nanotechynology

      Volume: 14 Issue: 8 Pages: 6112-6115

    • DOI

      10.1166/jnn.2014.8306

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effect of c-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN2014

    • Author(s)
      K. Shojiki and R. Katayama(他6名)
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53(5S1) Issue: 5S1 Pages: 05FL07-05FL07

    • DOI

      10.7567/jjap.53.05fl07

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar (0001) GaN/sapphire2014

    • Author(s)
      T. Tanikawa, K. Shojiki, T. Aisaka, T. Kimura, S. Kuboya, T. Hanada, R. Katayama, T. Matsuoka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 Issue: 5S1 Pages: 05FL05-05FL05

    • DOI

      10.7567/jjap.53.05fl05

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Investigation of indium incorporation into InGaN by nitridation of sapphire substrate in MOVPE2013

    • Author(s)
      J. H. Choi and R. Katayama(他4名)
    • Journal Title

      phys. stat. sol. (c)

      Volume: 10(3) Issue: 3 Pages: 417-420

    • DOI

      10.1002/pssc.201200667

    • Related Report
      2013 Annual Research Report 2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs2013

    • Author(s)
      Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
    • Journal Title

      THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012

      Volume: 1566 (1) Pages: 538-539

    • DOI

      10.1063/1.4848523

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Key Factors for Metal Organic Chemical Vapor Deposition of InGaN Films with High InN Molar Fraction2013

    • Author(s)
      Yu Huai Liu, Fang Wang, Wei Zhang, Shou Yi Yang, Yuan Tao Zhang, Ryuji Katayama, Takashi Matsuoka
    • Journal Title

      Applied Mechanics and Materials

      Volume: 341 Pages: 204-207

    • DOI

      10.4028/www.scientific.net/amm.341-342.204

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2013

    • Author(s)
      RG Jin, S Yagi, Y Hijikata, S Kuboya, K Onabe, R Katayama, H Yaguchi
    • Journal Title

      Journal of Crystal Growth

      Volume: 378 Pages: 85-87

    • DOI

      10.1016/j.jcrysgro.2012.12.043

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer2013

    • Author(s)
      M Kakuda, S Morikawa, S Kuboya, R Katayama, H Yaguchi, K Onabe
    • Journal Title

      Journal of Crystal Growth

      Volume: 378 Pages: 307-309

    • DOI

      10.1016/j.jcrysgro.2012.12.120

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy2013

    • Author(s)
      Yuantao Zhang, Takeshi Kimura, Kiattiwut Prasertusk, Takuya Iwabuchi, Suresh Kumar, Yuhuai Liu, Ryuji Katayama, Takashi Matsuoka
    • Journal Title

      Thin Solid Films

      Volume: 536 Pages: 152-155

    • DOI

      10.1016/j.tsf.2013.04.004

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Nitridation on Indium-composition of InGaN Films2012

    • Author(s)
      J. H. Choi and R. Katayama(他5名)
    • Journal Title

      Key. Eng. Mater

      Volume: 508 Pages: 193-198

    • URL

      http://www.scientific.net/KEM.508.193

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Tilted domain and indium content of MOVPE-grown InGaN layer on m-plane GaN substrate2012

    • Author(s)
      K. Shojiki and R. Katayama(他4名)
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 51 Issue: 4S Pages: 04DH01-04DH01

    • DOI

      10.1143/jjap.51.04dh01

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical properties of the periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他7名)
    • Journal Title

      Proc. of SPIE

      Volume: 8268 Pages: 826814-826913

    • DOI

      10.1117/12.909831

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Nitridation on Indium-composition of InGaN Films2012

    • Author(s)
      J. H. Choi, S. Kumar, S. Y. Ji, K. Shojiki, T. Hanada, R. Katayama and T. Matsuoka
    • Journal Title

      Key. Eng. Mater.

      Volume: 508 Pages: 193-198

    • DOI

      10.4028/www.scientific.net/kem.508.193

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs2012

    • Author(s)
      K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
    • Journal Title

      Appl. Phys. Express

      Volume: 5 Issue: 11 Pages: 111201-111201

    • DOI

      10.1143/apex.5.111201

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Presentation] Observation of Indium Content Distribution on m-plane InGaN Film with Hilloks2014

    • Author(s)
      K. Shojiki, T. Hanada, J. H. Choi, Y. Imai, S. Kimura, T. Shimada, T. Tanikawa, R. Katayama, T. Matsuoka
    • Organizer
      2013 Annual Meeting of Excellent Graduate School for "Materials Integration Center" and "Materials Science Center" & International Workshop on Advanced Materials Synthesis Process and Nanostructure
    • Place of Presentation
      Sendai, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Suppression of Metastable-Phase Inclusion in MOVPE-Grown N-Polar (000-1) InGaN/GaN Multiple Quantum Wells2014

    • Author(s)
      K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      Conference on LED and it’s industrial application ‘14
    • Place of Presentation
      Yokohama, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Realization of p-Type Conduction in Mg-Doped N-Polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy2014

    • Author(s)
      T. Tanikawa, J. H. Choi, K. Shojiki, S. Kuboya, R. Katayama, and T. Matsuoka
    • Organizer
      Conference on LED and it’s industrial application ‘14
    • Place of Presentation
      Yokohama, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] MOVPE成長 -c面InGaN/GaN多重量子井戸構造における準安定相混在の抑制2014

    • Author(s)
      正直花奈子,崔正焄,岩渕拓也,宇佐美徳隆,谷川智之,窪谷茂幸,花田貴,片山竜二,松岡隆志
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] c面Al2O3基板上にMOVPE成長したGaNの異常分散X線回折による極性判定2014

    • Author(s)
      花田貴,稲葉克彦,正直花奈子,崔正焄,片山竜二,谷川智之,窪谷茂幸,松岡隆志
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] Nonlinear Optical Application of Periodic Polarity-inverted GaN Waveguide2013

    • Author(s)
      R. Katayama(他8名)
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto
    • Year and Date
      2013-09-18
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Crystallographic Polarity Dependence of Surface Morphology Evolution during MOVPE Growth of GaN/Sapphire2013

    • Author(s)
      N. Yoshinogawa and R. Katayama(他5名、6番)
    • Organizer
      The 32nd Electron. Mater. Symp
    • Place of Presentation
      Shiga
    • Year and Date
      2013-07-11
    • Related Report
      2013 Final Research Report
  • [Presentation] 窒化物半導体フォトニックナノ構造の量子光学応用2013

    • Author(s)
      片山竜二(他7名)
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪
    • Year and Date
      2013-07-11
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] サファイア基板上GaN薄膜の有機金属気相成長挙動の格子極性依存性2013

    • Author(s)
      吉野川伸雄,片山竜二(他5名、6番)
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川
    • Year and Date
      2013-03-28
    • Related Report
      2013 Final Research Report
  • [Presentation] Improvement of surface morphology in (000-1) GaN/Sapphire grown by MOVPE with indium surfactant2013

    • Author(s)
      T. Tanikawa, T. Aisaka, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada and T. Matsuoka
    • Organizer
      Conference on LED and its industrial application '13 (LEDIA '13)
    • Place of Presentation
      Yokohama, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] mprovement of Surface Morphology in (000-1) GaN/Sapphire Grown by MOVPE with Indium Surfactant2013

    • Author(s)
      T. Aisaka, T. Tanikawa, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada, and T. Matsuoka
    • Organizer
      40th Intern. Symp. on Comp. Semcond. (ISCS2013)
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Evaluation and Solution of Metastable-Phase Inclusion in MOVPE-grown -c-plane InGaN/GaN Multiple Quantum Wells2013

    • Author(s)
      K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, T. Matsuoka
    • Organizer
      10th Int. Conf. on Nitride Semicond. (ICNS-10)
    • Place of Presentation
      Washington DC, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Influence of Mg-Doping on the Surface Morphology of (000-1) GaN/Sapphire Grown by Metalorganic Vapor Phase Epitaxy2013

    • Author(s)
      T. Tanikawa, T. Aisaka, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      10th Int. Conf. on Nitride Semicond. (ICNS-10)
    • Place of Presentation
      Washington DC, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Nonlinear Optical Application of Periodic Polarity-inverted GaN Waveguide2013

    • Author(s)
      R. Katayama, N. Yoshinogawa, S. Kurokawa, T. Tanikawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Enhancement of Surface Migration by Mg Doping in the Metalorganic Vapor Phase Epitaxy of (000-1) GaN/sapphire2013

    • Author(s)
      T. Tanikawa, T. Aisaka, T. Kimura, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Effect of c-plane Sapphire Substrate Miscut-angle on Indium Content of MOVPE-grown N-polar InGaN2013

    • Author(s)
      K. Shojiki, J.-H. Choi, H. Shindo, T. Kimura, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] The improvement of N-polar GaN surface during MOVPE growth with indium surfactant2013

    • Author(s)
      T. Aisaka, T. Tanikawa, T. Kimura, K. Shojiki, T. Iwabuchi, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Investigation and Suppression of Metastable-phase Inclusion in MOVPE-grown –c-plane InGaN/GaN Multiple Quantum Wells2013

    • Author(s)
      K. Shojiki, J. H. Choi, T. Iwabuchi1, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      KINKEN-WAKATE 2013 10th Materials Science School for Young Scientists
    • Place of Presentation
      Sendai, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] 窒化物半導体フォトニックナノ構造の量子光学応用2013

    • Author(s)
      片山竜二、黒川周斉、吉野川伸雄、谷川智之、福原裕次郎、窪谷茂幸、尾鍋研太郎、松岡隆志
    • Organizer
      第5回 窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学吹田キャンパス
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Observation of Phase Separation on m-plane InGaN Films with Micro-vicinal surface by Micro-beam XRD2013

    • Author(s)
      K. Shojiki, T. Hanada, J. H. Choi, Y. Imai, S. Kimura, T. Shimada, T. Tanikawa, R. Katayama and T. Matsuoka
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Related Report
      2013 Annual Research Report
  • [Presentation] Effect of indium surfactant on MOVPE growth of N-polar GaN2013

    • Author(s)
      T. Aisaka, T. Tanikawa, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada and T. Matsuoka
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Related Report
      2013 Annual Research Report
  • [Presentation] Crystallographic Polarity Dependence of Surface Morphology Evolution during MOVPE Growth of GaN/Sapphire2013

    • Author(s)
      N. Yoshinogawa, T. Iwabuchi, K. Shojiki, T. Kimura, T. Tanikawa, R. Katayama and T. Matsuoka
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Related Report
      2013 Annual Research Report
  • [Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定2013

    • Author(s)
      高宮健吾,八木修平,土方泰斗,望月敏光,吉田正裕,秋山英文,窪谷茂幸,片山竜二,尾鍋研太郎,矢口裕之
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学田辺キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] ヒロック形成にともなうm面InGaN薄膜のIn組成分布観察2013

    • Author(s)
      正直花奈子,花田貴,崔正焄,島田貴章,今井康彦,木村滋,谷川智之,片山竜二,松岡隆志
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      社大学田辺キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] MOVPE成長–c面InGaN/GaN多重量子井戸構造における準安定相混在の抑制2013

    • Author(s)
      正直花奈子, 崔正焄, 岩渕拓也, 宇佐美徳隆, 谷川智之, 窪谷茂幸, 花田貴, 片山 竜二, 松岡 隆志
    • Organizer
      第68回応用物理学会東北支部学術講演会
    • Place of Presentation
      山形大学米沢キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] MOVPE成長N極性InGaNにおけるIn組成のc面サファイア基板微傾斜角依存性2013

    • Author(s)
      正直花奈,崔正焄,進藤裕文,木村健司,谷川智之,花田貴,片山竜二,松岡隆志
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] Inサーファクタントによる(0001)GaNのMOVPE成長におけるステップフロー成長の促進2013

    • Author(s)
      逢坂崇,谷川智之,正直花奈子,木村健司,岩渕拓也,花田貴,片山竜二,松岡隆志
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] サファイア基板上GaN薄膜のMOVPE成長挙動の格子極性依存性2013

    • Author(s)
      吉野川伸雄,岩渕拓也,正直花奈子,木村健司,谷川智之,片山竜二,松岡隆志
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] Violet second harmonic generation from polarity inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他8名)
    • Organizer
      Int. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo
    • Year and Date
      2012-10-18
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Enhancement of violet second harmonic generation in periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他5名)
    • Organizer
      Int. Conf. on Molecular Beam Epitaxy
    • Place of Presentation
      Nara
    • Year and Date
      2012-09-25
    • Related Report
      2013 Final Research Report
  • [Presentation] Linear and nonlinear optical investigations of periodic polarity- inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他5名)
    • Organizer
      Int. Conf. on Superlattices, nanostructures, and Nanodevices
    • Place of Presentation
      Dresden, Germany
    • Year and Date
      2012-07-26
    • Related Report
      2013 Final Research Report
  • [Presentation] Linear and nonlinear optical investigations of periodic polarity- inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他5名)
    • Organizer
      4th Intern. Symp. on Growth of III-nitrides
    • Place of Presentation
      St. Petersburg, Russia
    • Year and Date
      2012-07-19
    • Related Report
      2013 Final Research Report
  • [Presentation] Violet-colored enhanced second harmonic generation from periodic polarity-inverted GaN waveguide2012

    • Author(s)
      R. Katayama(他8名)
    • Organizer
      The 31st Electron. Mater. Symp
    • Place of Presentation
      Shizuoka
    • Year and Date
      2012-07-13
    • Related Report
      2013 Final Research Report
  • [Presentation] 極性ワイドギャップ半導体フォトニックナノ構造の新規光機能2012

    • Author(s)
      片山竜二(他5名)
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京
    • Year and Date
      2012-03-15
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] 極性ワイドギャップ半導体フォトニックナノ構造の新規光機能2012

    • Author(s)
      片山竜二, 松岡隆志, 福原裕次郎, 角田雅弘, 窪谷茂幸, 尾鍋研太郎
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京・早稲田(招待講演)
    • Year and Date
      2012-03-15
    • Related Report
      2011 Annual Research Report
  • [Presentation] Optical properties of the periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他7名)
    • Organizer
      SPIE Photonics WEST 2012
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2012-01-23
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Optical properties of the periodic polarity-inverted GaN waveguides2012

    • Author(s)
      Ryuji Katayama, Yujiro Fukuhara, Masahiro Kakuda, Shigeyuki Kuboya, Kentaro Onabe, Syusai Kurokawa, Naoto Fujii, Takashi Matsuoka
    • Organizer
      SPIE Photonics WEST 2012
    • Place of Presentation
      米国・サンフランシスコ(招待講演)
    • Year and Date
      2012-01-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] マイクロファセットができたm面InGaN薄膜のIn濃度分布観察2012

    • Author(s)
      花田貴,崔正焄,正直花奈子,今井康彦,木村 滋,島田貴章,片山竜二,松岡隆志
    • Organizer
      プレIWN2012
    • Place of Presentation
      東京大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] Violet-colored enhanced second harmonic generation from periodic polarity- inverted GaN waveguide2012

    • Author(s)
      R. Katayama, S. Kurokawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, T. Tanikawa, T. Hanada and T.Matsuoka
    • Organizer
      The 31st Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      Shuzenji, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Influence of sapphire substrate miscut angle on Indium content of MOVPE-grown InGaN films2012

    • Author(s)
      K. Shojiki, J. H. Choi, H. Shindo, S. Y. Ji, V. S. Kumar, Y. H. Liu, T. Hanada, R. Katayama and T. Matsuoka
    • Organizer
      The 31st Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      Shuzenji, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Linear and nonlinear optical investigations of periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka
    • Organizer
      4th Intern. Symp.on Growth of III- nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Related Report
      2012 Annual Research Report
  • [Presentation] Enhancement of In-incorporation into InGaN by nitridation of sapphire substrate in MOVPE2012

    • Author(s)
      J. H. Choi, S. Kumar, K. Shojiki, T. Hanada, R. Katayama andT. Matsuoka
    • Organizer
      4th Intern. Symp.on Growth of III- nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Related Report
      2012 Annual Research Report
  • [Presentation] Influence of Sapphire Substrate Miscut Angle on Indium Content of MOVPE-grown InGaN Films2012

    • Author(s)
      K. Shojiki, H. Shindo, S. Y. Ji, V. S. Kumar, J. H. Choi, Y. H. Liu, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      4th Intern. Symp.on Growth of III- nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Related Report
      2012 Annual Research Report
  • [Presentation] Enhanced second harmonic generation from periodic polarity-inverted GaN waveguide2012

    • Author(s)
      R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka
    • Organizer
      Int. Conf. on Superlattices, Nanostructures, and Nanodevices (ICSNN2012)
    • Place of Presentation
      Dresden, Germany
    • Related Report
      2012 Annual Research Report
  • [Presentation] Enhancement of violet second harmonic generation in periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe and T. Matsuoka
    • Organizer
      17th Int. Conf. Molecular Beam Epitaxy
    • Place of Presentation
      Nara, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] (0001)および(000-1)面GaN上へMOVPE成長したInGaNの結晶品質比較2012

    • Author(s)
      谷川智之,片山竜二,松岡隆志
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] Violet second harmonic generation from polarity inverted GaN waveguides2012

    • Author(s)
      R. Katayama, S. Kurokawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, T. Tanikawa, T. Hanada and T. Matsuoka
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Comparison of crystalline quality in InGaN grown on (0001) and (0001) GaN/Sapphire by metal-organic vapor phase epitaxy2012

    • Author(s)
      T. Tanikawa, R. Katayama and T. Matsuoka
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Study of In-composition of InGaN islands on m-plane GaN substrate using high-resolution microbeam XRD2012

    • Author(s)
      J.H. Choi, K. Shojiki, T. Shimada, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka, Y. Imai and S. Kimura
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] MOVPE成長(0001) GaNのステップフロー成長の促進2012

    • Author(s)
      逢坂崇,正直花奈子,岩渕拓也,木村健司,谷川智之,花田貴,片山竜二,松岡隆志
    • Organizer
      第67回応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] MOVPE成長N極性InGaNにおけるIn組成のc面サファイア基板微傾斜角依存性2012

    • Author(s)
      正直花奈子,崔正焄,進藤裕文,木村健司,谷川智之,花田貴,片山竜ニ,松岡隆志
    • Organizer
      第67回応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] サファイア基板上GaN薄膜の有機金属気相成長初期過程における表面モフォロジーの格子極性依存性2012

    • Author(s)
      吉野川伸雄,岩渕拓也,正直花奈子,木村健司,谷川智之,片山竜二,松岡隆志
    • Organizer
      第67回応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] (0001)面、(000-1)面GaN上へMOVPE成長したInGaNの表面モフォロジーとIn取り込み2012

    • Author(s)
      谷川智之,正直花奈子,崔正焄,片山竜二,松岡隆志
    • Organizer
      第67回応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学
    • Related Report
      2012 Annual Research Report
  • [Remarks] 研究紹介

    • URL

      http://www.matsuoka-lab.imr.tohoku.ac.jp/?katayama

    • Related Report
      2013 Annual Research Report

URL: 

Published: 2011-04-06   Modified: 2019-07-29  

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