Development of high sensitive holographic recording materials based on wide-bandgap semiconductor
| Project/Area Number |
23686011
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | Utsunomiya University (2014)
Tokyo Institute of Technology (2011-2013) |
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Principal Investigator |
FUJIMURA Ryushi 宇都宮大学, オプティクス教育研究センター, 准教授 (50361647)
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| Research Collaborator |
KUBO Yuki
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| Project Period (FY) |
2011-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥15,080,000 (Direct Cost: ¥11,600,000、Indirect Cost: ¥3,480,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2013: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2012: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000)
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| Keywords | フォトリフラクティブ効果 / 窒化物結晶 / ホログラム記録材料 |
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| Outline of Final Research Achievements |
Holographic data storage has been expected to be a next-generation optical data storage system because of its large storage capacity and fast transfer rate. In this study, We focused on AlN crystal as a new holographic recording material and investigated holographic recording properties in the deep UV spectral region. We found that AlN crystals shows larger refractive index grating than the other semiconductors. We also investigate the properties of light-induced absorption and reveal the recording model of AlN crystal.
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Report
(5 results)
Research Products
(4 results)
