Development of the high efficiency high precision wet processing method required for the SiC power device fabrication
| Project/Area Number |
23686027
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Kumamoto University |
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Principal Investigator |
KUBOTA Akihisa 熊本大学, 自然科学研究科, 准教授 (80404325)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥27,300,000 (Direct Cost: ¥21,000,000、Indirect Cost: ¥6,300,000)
Fiscal Year 2013: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
Fiscal Year 2011: ¥14,820,000 (Direct Cost: ¥11,400,000、Indirect Cost: ¥3,420,000)
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| Keywords | 超精密加工 / 鉄触媒援用研磨 / 紫外光援用ウエットエッチング / シリコンカーバイド（SiC） / 精密研磨 / シリコンカーバイド / 先端機能デバイス / シリコンカーバイド(SiC) / 触媒援用加工 / 化学的加工 |
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| Research Abstract |
To satisfy the demand for SiC substrates in power semiconductor device fabrication, we have developed a novel polishing technique utilizing reactive species generated on Fe catalyst surface in hydrogen peroxide solution and applied the proposed technique to flatten a single-crystal SiC substrate. As a result, overall 2-inch SiC wafers could be smoothed and an atomically smooth surface with an rms roughness of 0.1 nm level is obtained by our proposed method. Furthermore, we succeeded in getting various experimental factors to improve the process efficiency in an aqueous solution.
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Report
(4 results)
Research Products
(20 results)
