| Budget Amount *help |
¥27,300,000 (Direct Cost: ¥21,000,000、Indirect Cost: ¥6,300,000)
Fiscal Year 2013: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
Fiscal Year 2011: ¥14,820,000 (Direct Cost: ¥11,400,000、Indirect Cost: ¥3,420,000)
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| Research Abstract |
To satisfy the demand for SiC substrates in power semiconductor device fabrication, we have developed a novel polishing technique utilizing reactive species generated on Fe catalyst surface in hydrogen peroxide solution and applied the proposed technique to flatten a single-crystal SiC substrate. As a result, overall 2-inch SiC wafers could be smoothed and an atomically smooth surface with an rms roughness of 0.1 nm level is obtained by our proposed method. Furthermore, we succeeded in getting various experimental factors to improve the process efficiency in an aqueous solution.
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