Multi-band solar cell using strain-balanced quantum well of nitride semiconductors
Project/Area Number |
23686048
|
Research Category |
Grant-in-Aid for Young Scientists (A)
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Allocation Type | Single-year Grants |
Research Field |
Electronic materials/Electric materials
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Research Institution | The University of Tokyo |
Principal Investigator |
SUGIYAMA Masakazu 東京大学, 工学(系)研究科(研究院), 准教授 (90323534)
|
Project Period (FY) |
2011-04-01 – 2014-03-31
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥27,950,000 (Direct Cost: ¥21,500,000、Indirect Cost: ¥6,450,000)
Fiscal Year 2013: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2012: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2011: ¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
|
Keywords | 量子井戸 / 歪み補償 / 太陽電池 / サブバンド間吸収 / III-V化合物半導体 / 超格子 / in situ観察 / 窒化物半導体 / 2段階光電変換 |
Research Abstract |
Aiming at the photocurrent generation on the basis of two-step photon absorption, which is a promising way of over 50% efficiency, quantum well structure was employed and its potential as a 3-level light absorbing medium. First, InGaAs/GaAsP strain-balanced quantum wells were investigated and a superlattice structure with the barriers thinner than 3 nm exhibited the photocurrent generation via 2-step photon absorption, probably due to extended carrier lifetime in the quantum confinement state owing to efficient carrier separation by tunneling transport. Next, the strain-balanced stacking technology for InGaN/AlN system was established. This material system is ideal for a obtaining a large band offset which is required for the high efficiency by two-step photon absorption. The strain-balanced InGaN/AlN stack was superior to conventional InGaN/GaN in terms of crystal quality and photoluminescenc property. Finally, the carrier extraction from the nitride quantum wells was examined.
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Report
(4 results)
Research Products
(23 results)