Fabrication of spin-filter magnetic-hetero structures and their applications to electronic devices
| Project/Area Number |
23686049
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
NAKANE Ryosho 東京大学, 工学(系)研究科(研究院), 准教授 (50422332)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥25,610,000 (Direct Cost: ¥19,700,000、Indirect Cost: ¥5,910,000)
Fiscal Year 2013: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2012: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2011: ¥17,030,000 (Direct Cost: ¥13,100,000、Indirect Cost: ¥3,930,000)
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| Keywords | crystal growth / spintronics / 結晶成長 / スピンエレクトロニクス / 電子・電気材料 / 電子デバイス・機器 / 量子閉じ込め |
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| Research Abstract |
To fabricate spin-filter magnetic-hetero structures, it is essential to fabricate a buffer layer on a Si substrate. In the whole years, I tried to fabricate such a buffer, mainly gamma-Al2O3, on Si substrates. Direct deposition of Al2O3 on Si was performed using a electron-beam evaporator and a pulsed laser deposition system. In addition, thermal reaction of Al and SiO2 was also performed after an Al film deposition on a SiO2/Si substrate.
Fabricated buffer layers were evaluated using reflective high energy electron diffraction, atomic force microscope, and X-ray photoelectron spectroscopy. From the analysis, it was concluded that Al2O3 layers without SiO2 interlayers were successfully fabricated on Si substrates , but I could not try to fabricate magnetic multi layers on these buffer layers.
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Report
(4 results)
Research Products
(10 results)
