| Budget Amount *help |
¥17,030,000 (Direct Cost: ¥13,100,000、Indirect Cost: ¥3,930,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2012: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
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| Research Abstract |
Electrical measurements of conducting and dielectric materials under high pressures (in the order of GPa) reveal important information regarding orbital overlaps, electronic states, changes in transition temperatures, and activation volumes. In this study, we demonstrate a new method for high-pressure impedance measurements, up to ~4 GPa, utilizing an indentation-induced local stress field. The current system does not require any pressure mediums or pressure calibrations. The deltaV for O2- ion conduction in 10 mol% Y2O3-doped zirconia at 500oC was estimated to be 3.0 cm3 mol-1. deltaV increased with increasing temperatures from 500 to 600oC. The technique also allows the concurrent determination of the effective elastic modulus by fitting the experimental data obtained from the indentation load-depth profile curves with the Hertzian elastic model. The experimental values were consistent with the theoretical values.
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