| Project/Area Number |
23686106
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Material processing/treatments
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| Research Institution | Kyoto University |
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Principal Investigator |
MORISHITA Kohei 京都大学, エネルギー科学研究科, 特定助教 (00511875)
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| Project Period (FY) |
2011-11-18 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
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| Keywords | 半導体結晶 / 高温塑性変形 / 一次再結晶 / シリコン / ゲルマニウム |
|---|
| Research Abstract |
Single crystal semiconducting materials like silicon, which is brittle in nature owing to its covalent character, easily crack at a small load. Therefore, almost researchers "believe" it is impossible to deform them largely. As the results, primary recrystallization of silicon has not been studied although primary recrystallization by heat-treatment after large deformation is common knowledge in metal materials field. In the present study, large deformation of single-crystal silicon bulk at the temperature just below the silicon melting point was demonstrated, and the primary recrystallization of them were studied.
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