New Epitaxial route by using Well-Aligned Nanocrystalline films Self-Assembled on Amorphous Substrates.
| Project/Area Number |
23686108
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Properties in chemical engineering process/Transfer operation/Unit operation
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| Research Institution | Tohoku University |
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Principal Investigator |
HOJO Daisuke 東北大学, 原子分子材料科学高等研究機構, 助教 (30511919)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥25,610,000 (Direct Cost: ¥19,700,000、Indirect Cost: ¥5,910,000)
Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥22,880,000 (Direct Cost: ¥17,600,000、Indirect Cost: ¥5,280,000)
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| Keywords | ハイブリットナノ粒子 / エピタキシャル成長 / 薄膜・微粒子形成操作 / CeO2ナノ粒子 / 粒径分布 / 高配向 |
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| Research Abstract |
Well-aligned CeO2 nanocrystalline monolayer was successfully fabricated through self-assembly of the nanocrystals for using individual nanocrystals as a nanoscale substrate for epitaxial growth. We confirmed that anatase-type TiO2 was selectively nucleated and epitaxially grown on individual CeO2 nanocrystals after sputtering and successive annealing. It results in fabricating of tandem nanocrsytals with steep interfaces between TiO2{004} and CeO2{002} facets.
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Report
(4 results)
Research Products
(16 results)
