Band Gap Engineering in MonolayGerraphene Using Atomic ForceMicroscopy-Based Lithography Technique
| Project/Area Number |
23710155
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | The University of Tokyo |
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Principal Investigator |
MASUBUCHI Satoru 東京大学, ナノ量子情報エレクトロニクス研究機構, 特任助教 (50596195)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2011: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | グラフェン / 原子間力顕微鏡 / 陽極酸化法 / 酸化グラフェン / バンドギャップ制御 |
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| Research Abstract |
The purpose of this work was to develop a method for engineering band gap in monolayer graphene using atomic force microscopy (AFM) based local anodic oxidation (LAO) lithography. First, we fabricated graphene/graphene oxide/graphene (G/GO/G) lateral junction by employing AFM-based LAO lithography technique. The current-voltage (I-V) characteristics of G/GO/G showed strong nonlinearity, where the current was completely suppressed at around V = 0 V and increased above a critical threshold voltage of V = 3 V. This observation demonstrated transport gap formation in graphene oxide using AFM-based LAO lithography. Secondary, we fabricated graphene nanoribbon device with channel width of 10 nm using AFM-based LAO. The conductance of graphene nanoribbon was completely suppressed at the charge neutrality point, indicating the formation of transport gap. This observation demonstrated fabrication of the ultra-narrow graphene nanoribbon structure by employing high-resolution feature of AFM-based LAO lithography.
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Report
(3 results)
Research Products
(22 results)
