| Project/Area Number |
23710158
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Aichi Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
|
| Project Status |
Completed (Fiscal Year 2012)
|
| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
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| Keywords | 量子ドット / 半導体レーザ / サブバンド準位 / 電子デバイス・電子機器 |
|---|
| Research Abstract |
The purpose of this work is to develop a high efficiency quantum dots(QDs) laser, utilizing a subband formation with tunnel effect between the multi staked QDs structures. In this work, we have calculated the coupling of wave-function various barrier widths in QDs and the wave function have been coupled under 10nm barrier width. Through the calculation and experiments, it was shown that the Optical amplification factor was highest level in the multi stacked QD with as 3.5nm barrier width.
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