Growth of free-standing two-dimensional atomic sheet by nano-plasma processing and its applications
Project/Area Number |
23740405
|
Research Category |
Grant-in-Aid for Young Scientists (B)
|
Allocation Type | Multi-year Fund |
Research Field |
Plasma science
|
Research Institution | Tohoku University |
Principal Investigator |
KATO Toshiaki 東北大学, 大学院・工学研究科, 助教 (20502082)
|
Project Period (FY) |
2011 – 2012
|
Project Status |
Completed (Fiscal Year 2012)
|
Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2011: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
|
Keywords | 単層カーボンナノウォール / 垂直配向 / グラフェン / プラズマCVD / キャリア移動度 |
Research Abstract |
Direct growth of graphene on an insulating substrate is realized by rapid-heating plasma CVD (RH-PCVD), which is originally developed by our group. For the first time, integration of graphene nanoribbons, quasi-one-dimensional structure of graphene, is also realized using Ni nanobar as catalysts for their growth. It is also revealed that the graphene nanoribbon devices show very high transistor performance (on/off ratio > 10,000).
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Report
(3 results)
Research Products
(81 results)