| Project/Area Number |
23750150
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Functional materials chemistry
|
|---|
| Research Institution | Tokyo Institute of Technology |
|---|
Principal Investigator |
FUJII Shintaro 東京工業大学, 理工学研究科, 流動研究員 (70422558)
|
|---|
| Project Period (FY) |
2011 – 2012
|
| Project Status |
Completed (Fiscal Year 2013)
|
| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
|
|---|
| Keywords | グラフェン / 電子状態 / プローブ顕微鏡 / ナノ炭素材料 / 表面・界面物性 / ナノ材料 |
|---|
| Research Abstract |
We investigated electronic properties of the edge state (i.e., localized non-bonding pi-state) in nano-sized graphene, which are prepared by chemical oxidation of graphene. Non-oxidized nanographene fragments surrounded by oxidized regions are present in the oxidized graphene sheets. The nano-fragments of 1-10 nm in sizes indicate largely modulated pi-state depending on their edge-geometries (i.e., armchair or zigzag types) [AngewChem2012]. We succeeded in inducing on-off switching of the edge state for oxidized graphene-vacancy defects by scanning probe manipulation technique [ACSNANO2013]. This result can be basically understood by reversible change in the oxidized structures and the corresponding change in the sublattice symmetry around the defect site. This study provides fundamental guidance toward understanding how oxidized defect structures contribute to the unique electronic state of graphene oxide and its potential future applications in electronic devices.
|
