| Project/Area Number |
23750214
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Functional materials/Devices
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
|
| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 電気 / 磁気デバイス / 超伝導薄膜 / 超伝導 / 臨界電流 / 高温超伝導 / 鉄系超伝導体 / 薄膜 / 傾角粒界接合 / 薄膜線材 |
|---|
| Research Abstract |
Transport properties of bicrystal grain boundary (BGB) junctions were studied in cobalt-doped BaFe_2 As_2 (BaFe_2 As_2 :Co) epitaxial films grown on [001]-tilt bicrystal substrates of MgO and (La, Sr)(Al, Ta)O_3 with misorientation angles θ_GB=3-45o. A transition from a strongly-coupled GB behavior to a weak-link behavior was observed in current density- voltage characteristics under self-field around θ_GB ~9°. This result clarifies that the high performance thin-film coated conductors using iron-based superconductors can be fabricated when we employ a metal-tape substrate with the in-plane orientation <9°.
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