Investigation of Preferential Source Generation Mechanism for the Realization of Bulk Crystal Growth of Indium Nitride
| Project/Area Number |
23760006
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
TOGASHI Rie 東京農工大学, 工学(系)研究科(研究院), 助教 (50444112)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | エピタキシャル / 結晶成長 / 窒化インジウム / HVPE / 熱力学解析 |
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| Research Abstract |
In order to realize high-crystalline quality and thick InN layers, following studies were performed: (1) investigation of the influence of growth rate and grown thickness on InN crystalline quality using a conventional hydride vapor phase epitaxy (HVPE) system, (2) thermodynamic analysis of the In source zone for appreciable generation of InCl3, (3) design and development of a new HVPE system with a two-stage source generation for the generation of InCl3, and (4) investigation of high-speed InN growth in both In- and N-polarities using the new HVPE system.
The same growth rate of InN grown by new HVPE system was achieved only using around 1/40 times the total Cl2 input partial pressure of InN grown by conventional HVPE system. Thus, efficiency for the generation of InCl3 gas was significantly improved compared with conventional HVPE system. In and N polarity InN can be grown at high growth rates at high temperature, owing to the preferential formation of InCl3.
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Report
(4 results)
Research Products
(40 results)
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[Presentation] HVPE growth of InN on InN/sapphire (0001) templates prepared by MBE2012
Author(s)
Ryota Imai, Sho Yamamoto, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi, and Akinori Koukitu
Organizer
International Workshop on Nitride Semiconductors 2012 (IWN2012)
Place of Presentation
Sapporo Convention Center, Sapporo, Japan(TuP-GR-60.)
Year and Date
2012-10-16
Related Report
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[Presentation] HVPE growth of InN on InN/sapphire (0001) templates prepared by MBE
Author(s)
Ryota Imai, Sho Yamamoto, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi, and Akinori Koukitu
Organizer
International Workshop on Nitride Semiconductors 2012 (IWN2012)
Place of Presentation
Sapporo Convention Center, Sapporo, Japan
Related Report
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