Investigation of crystalline orientation of III-nitride semiconductors grown on high-index and non-polar oriented GaAs substrates
| Project/Area Number |
23760008
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
MURAKAMI Hisashi 東京農工大学, 大学院・工学研究院, 准教授 (90401455)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | エピタキシャル成長 / 窒化インジウム / 半極性 / III族窒化物半導体 / 高指数面 |
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| Research Abstract |
In this research, investigation of semi-polar nitride semiconductor growth on GaAs substrates with various orientations was carried out. For fiscal 23rd, growth of semi-polar InN on GaAs(113)A, (113)B and non-polar (110) surfaces, and epitaxial relationship between InN and GaAs and mechanism for suppression of twin crystal formation were clarified. Also, for fiscal 24th, InN growth on GaAs substrates of other indices such as (112)A, (112)B, (114)A and (114)B was studied.Consequently, as we expected, [0001] direction of InN tended to be parallel to [111] direction of GaAs when the growth temperature is relatively high. As a result, we succeeded to grow semi-polar InN of various crystal orientations by selecting the index (orientation) of GaAs substrate. (For example, {10-13}-oriented and {11-22}-oriented InN can be grown on GaAs(110) and (113)B, respectively.) Also, it is possible to suppress the twin crystal formation into the grown crystal by using the difference in thermal stability between In-polarity and N-polarity InN, and by the introduction of small amount of hydrogen into the carrier gas during the growth.
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Report
(3 results)
Research Products
(90 results)
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[Journal Article] Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport2012
Author(s)
Yoshinao Kumagai, Yuki Kubota, Toru Nagashima, Toru Kinoshita, Rafael Dalmau, Raoul Schlesser, Baxter Moody, Jinqiao Xie, Hisashi Murakami, Akinori Koukitu, Zlatko Sitar
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Journal Title
Applied Physics Express
Volume: Vol. 5
Related Report
Peer Reviewed
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[Presentation] AlN/sapphire(0001)テンプレート上へのAlN HVPE高速成長における成長速度の影響2011
Author(s)
添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 富樫理恵, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
Organizer
第72回応用物理学会学術講演会
Place of Presentation
山形大学小白川キャンパス
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