| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Research Abstract |
In this research, investigation of semi-polar nitride semiconductor growth on GaAs substrates with various orientations was carried out. For fiscal 23rd, growth of semi-polar InN on GaAs(113)A, (113)B and non-polar (110) surfaces, and epitaxial relationship between InN and GaAs and mechanism for suppression of twin crystal formation were clarified. Also, for fiscal 24th, InN growth on GaAs substrates of other indices such as (112)A, (112)B, (114)A and (114)B was studied.Consequently, as we expected, [0001] direction of InN tended to be parallel to [111] direction of GaAs when the growth temperature is relatively high. As a result, we succeeded to grow semi-polar InN of various crystal orientations by selecting the index (orientation) of GaAs substrate. (For example, {10-13}-oriented and {11-22}-oriented InN can be grown on GaAs(110) and (113)B, respectively.) Also, it is possible to suppress the twin crystal formation into the grown crystal by using the difference in thermal stability between In-polarity and N-polarity InN, and by the introduction of small amount of hydrogen into the carrier gas during the growth.
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