Establishment of basic techniques about gallium oxide related semiconductor films
| Project/Area Number |
23760009
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
OSHIMA Takayoshi 東京工業大学, 大学院・理工学研究科, 助教 (60583151)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2011: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 酸化ガリウム / ワイドギャップ半導体 / バンドギャップエンジニアリング / ヘテロ接合 / 光電極 / 水分解 / 新材料探索 / 薄膜成長 / 酸化物半導体 |
|---|
| Research Abstract |
Ga2O3 related materials, which are relatively novel wide-band-gap semiconductors, were studied in this research. Especially, we focused on the most stable ・-phase. As for electrical application, we have succeeded control of conductivity and band-gap engineering. Photocatalytic activities of Ga2O3 were also investigated in detail for optical application. We also demonstrated epitaxial stabilization of meta-stable phases of ・and ・. Furthermore, we have achieved ZnGa2O4 single crystalline film with a single domain and characterized its physical properties.
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Report
(3 results)
Research Products
(42 results)
