Spectrum-shape-controllable near-infrared light source based on multi-color quantumdots monolithically grown in selective areas

• Project/Area Number: 23760015
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Wakayama University
• Principal Investigator: OZAKI Nobuhiko 和歌山大学, システム工学部, 准教授 (30344873)
• Project Period (FY): 2011 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2011: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
• Keywords: 量子ドット / 近赤外広帯域光源 / MBE / 光コヒーレンストモグラフィー(OCT) / OCT / 選択領域成長

Research Abstract

We have developed a near-infrared broadband light source based on InAs/GaAs quantum dots (QDs) for optical coherence tomography (OCT).Self-assembled InAs-QDs possessuseful features for the OCT imaging: emissionswith long penetration depth in bio-samples and withbroadband spectrumdue to theircertain size distribution.We realized a broadband and spectrum-shape-controllable light source by using our developedtechnique formonolithic growth of InAs-QDs with different emission wavelengths. Thisdemonstrates a potentialfor novel NIR light source to obtainhigh qualityOCT images.

Research Products

• [Journal Article] Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3 m by using quantum dot bi-layer for broadband light source (2013)
  • Author(s): N. Ozaki, Y. Nakatani, S. Ohkouchi, N. Ikeda, Y. Sugimoto, K. Asakawa, E. Clarke, R. A. Hogg
  • Journal Title: J. Crystal Growth Volume: 373 Pages: 1213-1215
  • DOI: 10.1016/j.jcrysgro.2012.12.110
  • Peer Reviewed
• [Journal Article] Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05 um using In-flush technique for broadband near-infrared light source (2013)
  • Author(s): Yuji Hino
  • Journal Title: J. Crystal Growth Volume: 未定 Pages: 501-505
  • DOI: 10.1016/j.jcrysgro.2012.12.077
  • Peer Reviewed
• [Journal Article] Broadband light source based on four-color self-assembled InAs quantum dot ensembles monolithically grown in selective areas (2012)
  • Author(s): Nobuhiko Ozaki, Koichi Takeuchi, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, Kiyoshi Asakawa, and Richard A. Hogg
  • Journal Title: IEICE Trans. Electron Volume: E95-C(2) Pages: 247-250
  • NAID: 10030609983
  • Peer Reviewed
• [Journal Article] Broadband Light Source Based on Four-Color Self-Assembled InAs Quantum Dot Ensembles Monolithically Grown in Selective Areas (2012)
  • Author(s): Nobuhiko Ozaki, Koichi Takeuchi, Shunsuke Ohkouchi, Naoki Ikeda
  • Journal Title: IEICE Transactions on Electronics Volume: E95-C Issue: 2 Pages: 247-250
  • DOI: 10.1587/transele.E95.C.247
  • NAID: 10030609983
  • ISSN: 0916-8524, 1745-1353
  • Peer Reviewed
• [Presentation] Growth of stacked In-flushed-QD layers emitting at 1mm with Gaussian-like broadband spectrum (2013)
  • Author(s): Nobuhiko Ozaki, Yuji Hino, Shunsuke Ohkouchi, Naoki Ikeda, and Yoshimasa Sugimoto
  • Organizer: the 40thInternational Symposiumon Compound Semiconductors (ISCS2013)
  • Place of Presentation: Kobe Convention Center, Kobe, Japan
• [Presentation] 近接二層積層によるGaAs基板上InAs-QDの発光長波長化の検討(II) (2013)
  • Author(s): 中谷擁平,尾崎信彦,大河内俊介,池田直樹,杉本喜正,Edmund Clarke,Richard Hogg
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] 発光波長制御されたIn-flushed-QDの積層成長による1ミクロン帯広帯域発光 (2013)
  • Author(s): 日野雄司,尾崎信彦,大河内俊介,池田直樹,杉本喜正
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] 多波長量子ドットによる近赤外広帯域光源開発とOCTへの応用 (2012)
  • Author(s): 尾崎信彦
  • Organizer: 第23回GRL浜松セミナー～若手研究者のための光・電子・情報科学に関する情報交換～
  • Place of Presentation: 静岡大学浜松キャンパス総合研究棟
  • Year and Date: 2012-01-25
• [Presentation] Monolithic growth of multi-color InAs-QD ensembles for broadband and spectrum-shape-controllable near-infrared light source (2012)
  • Author(s): Nobuhiko Ozaki, Koichi Takeuchi, Yuji Hino, Yohei Nakatani, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, Kiyoshi Asakawa, Richard A. Hogg
  • Organizer: 2012 Collaborative Conference on Crystal Growth (3CG 2012)
  • Place of Presentation: Orlando, Florida, USA
• [Presentation] Expanding emission wavelength of self-assembled InAs quantum dots beyond 1.3-μm by usingthe QD bi-layer for broadband light source (2012)
  • Author(s): N. Ozaki, Y. Nakatani, S. Ohkouchi, N. Ikeda, Y. Sugimoto and R. Hogg
  • Organizer: the 17th International Conference on Molecular Beam Epitaxy (MBE2012)
  • Place of Presentation: Nara Prefectural New Public Hall, Nara, Japan
• [Presentation] Controlling emission wavelength of InAs quantum dots using the In-flush technique for broadband 1.05-μm light source (2012)
  • Author(s): Y. Hino, N. Ozaki, S. Ohkouchi, N. Ikeda and Y. Sugimoto
  • Organizer: the 17thInternational Conference on Molecular Beam Epitaxy (MBE2012)
  • Place of Presentation: Nara Prefectural New Public Hall, Nara, Japan
• [Presentation] In-flush法による1ミクロン帯発光InAs-QDの発光強度改善 (2012)
  • Author(s): 日野雄司,尾崎信彦,大河内俊介,池田直樹,杉本喜正
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学城北地区,松山大学文京キャンパス
• [Presentation] 多色量子ドット並列構造による近赤外広帯域光源のスペクトル成形 (2012)
  • Author(s): 竹内晃一,尾崎信彦,大河内俊介,池田直樹,杉本喜正,小田久哉,浅川潔,Richard Hogg
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学早稲田キャンパス
• [Presentation] 医療・生体イメージング光源に向けた1ミクロン帯発光InAs-QD作製 (2012)
  • Author(s): 日野雄司,尾崎信彦,大河内俊介,池田直樹,杉本喜正
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学早稲田キャンパス
• [Presentation] 近接二層積層によるGaAs基板上InAs-QDの発光長波長化の検討 (2012)
  • Author(s): 中谷擁平,尾崎信彦,大河内俊介,池田直樹,杉本喜正
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学早稲田キャンパス
• [Presentation] 多波長量子ドットによる近赤外広帯域光源開発とOCTへの応用 (2012)
  • Author(s): 尾崎信彦
  • Organizer: 第23回GRL浜松セミナー～若手研究者のための光・電子・情報科学に関する情報交換～(招待講演)
  • Place of Presentation: 静岡大学浜松キャンパス
• [Presentation] Selective-area growth of 4-color InAs-QD ensembles for broadband light source (2011)
  • Author(s): K. Takeuchi, N. Ozaki, S. Ohkouchi, N. Ikeda, Y. Sugimoto, K. Asakawa, R. A. Hogg
  • Organizer: 2011 International Conference on Solid State Devices and Materials (SSDM 2011)
  • Place of Presentation: Nagoya, Japan
• [Presentation] 90度回転メタルマスク法により作製した広帯域光源用4色量子ドットの光学評価 (2011)
  • Author(s): 竹内晃一,尾崎信彦,大河内俊介,池田直樹,杉本喜正,浅川潔,Richard Hogg
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学小白川キャンパス
• [Presentation] OCT光源素子応用を目指した半導体ナノ構造作製 (2011)
  • Author(s): 尾崎信彦
  • Organizer: 第一回和歌山医工学研究会(招待講演)
  • Place of Presentation: 和歌山県立医科大学
• [Presentation] 近赤外広帯域光源に向けた多波長量子ドット (2011)
  • Author(s): 尾崎信彦
  • Organizer: わかやまテクノ・ビジネスフェア'11技術シーズ発表会(招待講演)
  • Place of Presentation: アバローム紀の国
• [Presentation] 多波長量子ドットによるOCT用近赤外広帯域光源の開発 (2011)
  • Author(s): 尾崎信彦
  • Organizer: イノベーション・ジャパン2011－大学見本市
  • Place of Presentation: 東京国際フォーラム
• [Presentation] Monolithic growth of multi-color InAs-QD ensembles for broadband and spectrum-shape-controllable near-infrared light source
  • Author(s): Nobuhiko Ozaki
  • Organizer: The 2012 Collaborative Conference on Crystal Growth (3CG2012)
  • Place of Presentation: Orlando, Florida, USA
  • Invited
• [Presentation] Expanding emission wavelength of self-assembled InAs quantum dots beyond 1.3-um by using the QD bi-layer for broadband light source
  • Author(s): N. Ozaki
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy (MBE2012)
  • Place of Presentation: Nara, Japan
• [Presentation] Controlling emission wavelength of InAs quantum dots using the In-flush technique for broadband 1.05-um light source
  • Author(s): N. Ozaki
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy (MBE2012)
  • Place of Presentation: Nara, Japan
• [Presentation] 1ミクロン帯発光広帯域光源を目指したIn-flush法によるInAs量子ドットの作製と光学評価
  • Author(s): 尾崎信彦
  • Organizer: 第23回光物性研究会
  • Place of Presentation: 大阪市立大学
• [Presentation] Inフラッシュ法を用いた1ミクロン帯広帯域発光InAs量子ドットの作製と医療イメージングへの応用検討
  • Author(s): 尾崎信彦
  • Organizer: 電子情報通信学会LQE研究会
  • Place of Presentation: 大阪市立大学
• [Presentation] 医療・生体イメージング光源に向けた1ミクロン帯広帯域発光InAs量子ドットの作製
  • Author(s): 尾崎信彦
  • Organizer: 日本材料学会 半導体エレクトロニクス部門 平成24年度第1回研究会
  • Place of Presentation: 和歌山大学
• [Presentation] In-flush法による1ミクロン帯発光InAs-QDの発光強度改善
  • Author(s): 尾崎信彦
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
• [Presentation] 多波長InAs 量子ドット成長による近赤外広帯域光源開発
  • Author(s): 尾崎信彦
  • Organizer: 和歌山大学-徳島大学 光・ナノテクノロジー研究会
  • Place of Presentation: 和歌山大学
• [Remarks] 和歌山大学システム工学部 精密物質学科 光機能・ナノ材料Gr. 研究内容
  • URL: http://www.wakayama-u.ac.jp/~ozaki/research.html