| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Research Abstract |
The photoluminescence (PL) properties of crystalline Er-Si-O compound on silicon substrate prepared using a simple method through evaporation and thermal annealing have been investigated. Diffraction peaks corresponding to crystalline Er-Si-O were clearly detected in X-ray diffraction measurements. Er-related infrared luminescence was observed at around 1520 nm at room temperature. This luminescence of the crystalline Er-Si-O compound on Si was due not to direct excitation of the 4f shell of Er3+, but to excitation of the host Si, i.e. indirect excitation. The Er-related PL spectra also showed several peaks at room temperature, which reflected the splitting patterns of ground manifolds (4I15/2) for the 4f11 shell of Er3+. Temperature quenching of Er-related infrared luminescence was greatly reduced in the crystalline Er-Si-O compound prepared using the simple method.
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