Quantitative Measurements of Local Valence Electronic States at Specific Surface and Interface of Ultrathin Metals and Metal Oxides High Dielectric Films
| Project/Area Number |
23760035
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Ehime University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2012: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2011: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
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| Keywords | シリコン / 表面界面 / 局所価電子状態 / オージェ電子-光電子コインシデンス分光 / 高誘電体超薄膜 / シリコン半導体 / ハフニウム / 高誘電体材料 / コインシデンス分光 / 水素 / 省エネルギー / 微細加工 / Si(110) / coincidence spectroscopy / HfO2 / Auger electron / photoelectron |
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| Research Abstract |
We have concluded that the Adatom-Buckling (AB) model is mostsuitable for the reconstruction surface structure of Si(100)-16×2 using Si-2pphotoelectron - Si-L_23VV Auger electron coincidence spectroscopy. In addition, the valence band maximum of Si(110) surface terminated by hydrogen atoms (H/Si(110)-1×1) is shifted by ~1 eV to the higher binding energy side in comparison with that of Si(110)-16×2 clean surface. However, we could not make the ultrathin metal and metal oxide films on Si(110)-16×2 surface or H/Si(110)-1×1 surface.
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Report
(3 results)
Research Products
(8 results)
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[Presentation] Construction and Evaluation of Auger-photoelectron Coincidence Apparatus at BL13 of HiSOR2012
Author(s)
T. Kakiuchi, Y. Sato, S. Hanaoka, S. Kajikawa, H. Hayashita, M. Ogawa, S. Arae, S. Wada, T. Sekitani, M. Tanaka, and K. Mase
Organizer
The 16th Hiroshima International Symposium on Synchrotron Radiation
Place of Presentation
Hiroshima University
Year and Date
2012-03-01
Related Report
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