| Project/Area Number |
23760035
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Ehime University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2012: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2011: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
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| Keywords | シリコン / 表面界面 / 局所価電子状態 / オージェ電子-光電子コインシデンス分光 / 高誘電体超薄膜 / シリコン半導体 / ハフニウム / 高誘電体材料 / コインシデンス分光 / 水素 / 省エネルギー / 微細加工 / Si(110) / coincidence spectroscopy / HfO2 / Auger electron / photoelectron |
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| Research Abstract |
We have concluded that the Adatom-Buckling (AB) model is mostsuitable for the reconstruction surface structure of Si(100)-16×2 using Si-2pphotoelectron - Si-L_23VV Auger electron coincidence spectroscopy. In addition, the valence band maximum of Si(110) surface terminated by hydrogen atoms (H/Si(110)-1×1) is shifted by ~1 eV to the higher binding energy side in comparison with that of Si(110)-16×2 clean surface. However, we could not make the ultrathin metal and metal oxide films on Si(110)-16×2 surface or H/Si(110)-1×1 surface.
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