Construction of advanced observation system for semiconductor defect using scanning positron microbeam and electron beam induced current method
Project/Area Number |
23760039
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Thin film/Surface and interfacial physical properties
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Research Institution | Japan Atomic Energy Agency |
Principal Investigator |
MAEKAWA Masaki 独立行政法人日本原子力研究開発機構, 原子力科学研究部門 先端基礎研究センター, 研究副主幹 (10354945)
|
Project Period (FY) |
2011 – 2013
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
|
Keywords | 陽電子マイクロビーム / 空孔型欠陥 / 空間分布 / EBIC測定 / 欠陥準位 / 再結合中心 / イオン照射 / EBIC測定 / イオン注入 |
Research Abstract |
A complementary study of vacancy defects in Si substrates by using scanning positron microscope (SPM) and electron beam induced current (EBIC) method were demonstrated for the same samples and in the same chamber. Both the S parameter and EBIC contrast were found to be enhanced in the regions containing vacancy defects introduced by ion implantation. That is, the SPM provides a criterion if the spatially resolved carrier recombination centres by the EBIC method are originating from vacancy defects or not.
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Report
(4 results)
Research Products
(16 results)
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[Presentation]2013
Author(s)
前川雅樹、河裾厚男
Organizer
第8回高崎量子応用研究シンポジウム
Place of Presentation
高崎シティギャラリー(群馬)
Related Report
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[Presentation]2012
Author(s)
前川雅樹、河裾厚男
Organizer
応用物理学会
Place of Presentation
愛媛大学(愛媛)
Related Report
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[Presentation]2012
Author(s)
前川雅樹、河裾厚男
Organizer
第7回高崎量子応用研究シンポジウム
Place of Presentation
高崎シティギャラリー(群馬)
Related Report
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[Presentation]2011
Author(s)
前川雅樹、河裾厚男
Organizer
第6回高崎量子応用研究シンポジウム
Place of Presentation
高崎シティギャラリー(群馬)
Related Report
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