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Construction of advanced observation system for semiconductor defect using scanning positron microbeam and electron beam induced current method

Research Project

Project/Area Number 23760039
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionJapan Atomic Energy Agency

Principal Investigator

MAEKAWA Masaki  独立行政法人日本原子力研究開発機構, 原子力科学研究部門 先端基礎研究センター, 研究副主幹 (10354945)

Project Period (FY) 2011 – 2013
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Keywords陽電子マイクロビーム / 空孔型欠陥 / 空間分布 / EBIC測定 / 欠陥準位 / 再結合中心 / イオン照射 / EBIC測定 / イオン注入
Research Abstract

A complementary study of vacancy defects in Si substrates by using scanning positron microscope (SPM) and electron beam induced current (EBIC) method were demonstrated for the same samples and in the same chamber. Both the S parameter and EBIC contrast were found to be enhanced in the regions containing vacancy defects introduced by ion implantation. That is, the SPM provides a criterion if the spatially resolved carrier recombination centres by the EBIC method are originating from vacancy defects or not.

Report

(4 results)
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Research-status Report
  • 2011 Research-status Report
  • Research Products

    (16 results)

All 2014 2013 2012 2011 Other

All Journal Article (7 results) (of which Peer Reviewed: 6 results) Presentation (8 results) Remarks (1 results)

  • [Journal Article]2014

    • Author(s)
      M.Maekawa and A. Kawasuso
    • Journal Title

      JAEA-Review

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article]2013

    • Author(s)
      M.Maekawa and A. Kawasuso
    • Journal Title

      JAEA-Review

      Volume: 2013-059 Pages: 146-146

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article]2013

    • Author(s)
      M.Maekawa and A. Kawasuso
    • Journal Title

      Journal of Physics : Conference Series

      Volume: vol. 443

    • Related Report
      2013 Final Research Report
  • [Journal Article] Observation of spatial distribution of vacancy defects in semiconductor by positron microscope and electron beam induced current measurement2013

    • Author(s)
      M. Maekawa and A Kawasuso
    • Journal Title

      J. Phys. Conf. Ser

      Volume: 443 Pages: 12041-12041

    • DOI

      10.1088/1742-6596/443/1/012041

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Complementary study of vacancy defects in Si substrates by using SPM and EBIC method2013

    • Author(s)
      M. Maekawa and A. Kawasuso
    • Journal Title

      JAEA-Review

      Volume: 2013-059 Pages: 146-146

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Observation of spatial distribution of vacancy defects in semiconductor by positron microscope and electron beam induced current measurement2013

    • Author(s)
      M Maekawa and A Kawasuso
    • Journal Title

      J. Phys. Conf. Ser

      Volume: 印刷中

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Journal Article]2012

    • Author(s)
      M.Maekawa and A. Kawasuso
    • Journal Title

      JAEA-Review

      Volume: 2012-046 Pages: 140-140

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Presentation]2013

    • Author(s)
      前川雅樹、河裾厚男
    • Organizer
      第8回高崎量子応用研究シンポジウム
    • Place of Presentation
      高崎シティギャラリー(群馬)
    • Related Report
      2013 Final Research Report
  • [Presentation]2012

    • Author(s)
      M. Maekawa and A. Kawasuso
    • Organizer
      16th International Conference of Positron Annihilation
    • Place of Presentation
      ブリストル大学(英国)
    • Related Report
      2013 Final Research Report
  • [Presentation]2012

    • Author(s)
      前川雅樹、河裾厚男
    • Organizer
      応用物理学会
    • Place of Presentation
      愛媛大学(愛媛)
    • Related Report
      2013 Final Research Report
  • [Presentation]2012

    • Author(s)
      前川雅樹、河裾厚男
    • Organizer
      第7回高崎量子応用研究シンポジウム
    • Place of Presentation
      高崎シティギャラリー(群馬)
    • Related Report
      2013 Final Research Report
  • [Presentation] Observation of spatial distribution of vacancy defects in semiconductor by positron microscope and electron beam induced current measurement2012

    • Author(s)
      Masaki Maekawa
    • Organizer
      16th International Conference of Positron Annnihilation
    • Place of Presentation
      Bristol (UK)
    • Related Report
      2012 Research-status Report
  • [Presentation] 陽電子マイクロビームと電子線誘起電流法(EBIC)による結晶欠陥の観察2012

    • Author(s)
      前川雅樹
    • Organizer
      応用物理学会
    • Place of Presentation
      愛媛大学
    • Related Report
      2012 Research-status Report
  • [Presentation]2011

    • Author(s)
      前川雅樹、河裾厚男
    • Organizer
      第6回高崎量子応用研究シンポジウム
    • Place of Presentation
      高崎シティギャラリー(群馬)
    • Related Report
      2013 Final Research Report
  • [Presentation] 陽電子マイクロビームを用いたイオン照射空孔分布挙動評価

    • Author(s)
      前川雅樹、河裾厚男
    • Organizer
      第8 回高崎量子応用研究シンポジウム
    • Place of Presentation
      高崎シティギャラリー
    • Related Report
      2013 Annual Research Report
  • [Remarks]

    • URL

      http://www.taka.jaea.go.jp/asrc/positron/index_j.html

    • Related Report
      2013 Final Research Report

URL: 

Published: 2011-08-05   Modified: 2019-07-29  

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