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Development of site-selective doping of rare-earth into nitride semiconductor

Research Project

Project/Area Number 23760281
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionToyohashi University of Technology

Principal Investigator

SEKIGUCHI Hiroto  豊橋技術科学大学, 大学院・工学研究科, 助教 (00580599)

Project Period (FY) 2011 – 2012
Project Status Completed (Fiscal Year 2012)
Budget Amount *help
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Keywords希土類添加半導体 / 窒化物半導体 / ユーロピウム / 希土類元素
Research Abstract

Eu doped nitride semiconductor is a hopeful material for realizing a novel device with unique features, such as narrow spectra, and no temperature dependence of emission wavelength. However, not all Eu ions incorporated in GaN host are optically active, resulting in reduction of emission efficiency. This is due to that the local crystal structure around Eu ion strongly affects energy transfer and luminous efficiency. In this study, we found Mg codoping technology and succeeded to improve emission efficiency by controlling optical site. For PL measurement, three strong peaks corresponded to ^5D_0-^7F_2 transitions were observed. With increasing Mg concentration, the dominant peak wavelength changed from 622.3 to 620.3 nm. The PL integrated intensity of the sample with optimal Mg concentration was 20 times higher than that of the sample without Mg co-doping. For the optimal sample, the luminous efficiency was estimated to be 77%. These results indicated that Mg co-doping could control the optical sites in GaN and led to suppress the non-radiative component from 5D0 level.

Report

(3 results)
  • 2012 Annual Research Report   Final Research Report ( PDF )
  • 2011 Research-status Report
  • Research Products

    (31 results)

All 2013 2012 2011 Other

All Journal Article (7 results) (of which Peer Reviewed: 4 results) Presentation (23 results) (of which Invited: 1 results) Remarks (1 results)

  • [Journal Article] Red Light-Emitting Diodes with Site Selective GaN:Eu Active Layer2013

    • Author(s)
      Hiroto Sekiguchi, Yasufumi Takagi, Tatsuki Otani, Ryota Matsumura, Hiroshi Okada, and Akihiro Wakahara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52

    • Related Report
      2012 Final Research Report
  • [Journal Article] Emission enhancement mechanism of GaN:Eu by Mg codoping2013

    • Author(s)
      Hiroto Sekiguchi, Yasufumi Takagi, Tatsuki Otani, Hiroshi Okada, and Akihiro Wakahara
    • Journal Title

      Journal of Applied Physics

      Volume: 113 Pages: 13105-13105

    • Related Report
      2012 Final Research Report
  • [Journal Article] Red Light-Emitting Diodes with Site Selective GaN:Eu Active Layer2013

    • Author(s)
      Hiroto Sekiguchi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Emission enhancement mechanism of GaN:Eu by Mg codoping2013

    • Author(s)
      Hiroto Sekiguchi
    • Journal Title

      Journal of Applied Physics

      Volume: 113 Issue: 1

    • DOI

      10.1063/1.4772950

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE2012

    • Author(s)
      Akihiro Wakahara, Hiroto Sekiguchi, Hiroshi Okada, and Yasufumi Takagi
    • Journal Title

      Journal of Luminescence

      Volume: 132 Pages: 3113-3113

    • Related Report
      2012 Final Research Report 2011 Research-status Report
  • [Journal Article] Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE2012

    • Author(s)
      Akihiro Wakahara
    • Journal Title

      Journal of Luminescence

      Volume: 132 Issue: 12 Pages: 3113-3117

    • DOI

      10.1016/j.jlumin.2012.02.001

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy2011

    • Author(s)
      Yasufumi Takagi, Takanobu Suwa, Hiroto Sekiguchi, Hiroshi Okada, and Akihiro Wakahara
    • Journal Title

      Applied Physics Letter

      Volume: 99 Pages: 171905-171905

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Presentation] Mg共添加GaN:Euを活性層としたLEDの発光出力向上2013

    • Author(s)
      松村亮太、大谷龍輝、関口寛人、高木康文、岡田浩、若原昭浩
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学、神奈川
    • Year and Date
      2013-03-01
    • Related Report
      2012 Annual Research Report 2012 Final Research Report
  • [Presentation] Mg共添加GaN:Euを活性層とした赤色発光ダイオードの作製2012

    • Author(s)
      大谷龍輝、関口寛人、高木康文、岡田浩、若原昭浩
    • Organizer
      電気情報通信学会、EP/CPM/LQE研究会
    • Place of Presentation
      大阪市立大学、大阪
    • Year and Date
      2012-11-01
    • Related Report
      2012 Annual Research Report 2012 Final Research Report
  • [Presentation] Mg共添加GaN:Euによる赤色域での高効率発光2012

    • Author(s)
      関口寛人、高木康文、大谷龍輝、岡田浩、若原昭浩
    • Organizer
      講演奨励賞受賞記念講演、第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛・松山大学、愛媛
    • Year and Date
      2012-09-01
    • Related Report
      2012 Final Research Report
  • [Presentation] NH_3-MBE法によるMg共添加GaN:Euの発光サイト制御2012

    • Author(s)
      大谷龍輝、関口寛人、高木康文、岡田浩、若原昭浩
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛・松山大学、愛媛
    • Year and Date
      2012-09-01
    • Related Report
      2012 Final Research Report
  • [Presentation] Optical properties of Mg codoped GaN:Eu LED grown by NH_3-MBE2012

    • Author(s)
      大谷龍輝、松村亮太、関口寛人、高木康文、岡田浩、若原昭浩
    • Organizer
      第31回電子材料シンポジウム
    • Place of Presentation
      修善寺、静岡
    • Year and Date
      2012-07-01
    • Related Report
      2012 Final Research Report
  • [Presentation] Mg共添加によるGaN:Euの発光特性向上のメカニズム2012

    • Author(s)
      関口寛人、大谷龍輝、高木康文、岡田浩、若原昭浩
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学、東京
    • Year and Date
      2012-03-01
    • Related Report
      2012 Final Research Report 2011 Research-status Report
  • [Presentation] NH_3-MBE法によるGaN:Eu LEDの発光特性2012

    • Author(s)
      大谷龍輝、松村亮太、関口寛人、高木康文、岡田浩、若原昭浩
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学、東京
    • Year and Date
      2012-03-01
    • Related Report
      2012 Final Research Report
  • [Presentation] Red light-emitting diodes with site selective GaN:Eu active layer2012

    • Author(s)
      Hiroto Sekiguchi, Tatsuki Otani, Yasufumi Takagi, Hiroshi Okada, Akihiro Wakahara
    • Organizer
      nternational Workshop on Nitride semiconductors 2012 (IWN 2012)
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Final Research Report
  • [Presentation] Luminescence site control of Mg codoped GaN:Eu by NH3-MBE2012

    • Author(s)
      Yasufumi Takagi, Tatsuki Otani, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara
    • Organizer
      Luminescence site control of Mg codoped GaN:Eu by NH3-MBE
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Final Research Report
  • [Presentation] Optical characteristics of Europium and Magnesium codoped GaN LEDs grown by NH3-MBE2012

    • Author(s)
      Hiroto Sekiguchi, Tatsuki Otani, Yasufumi Takagi, Hiroshi Okada, Akihiro Wakahara
    • Organizer
      9th International Symposium on Semiconductor Light Emitting Devices 2012 (ISSLED 2012)
    • Place of Presentation
      Berlin Germany
    • Related Report
      2012 Final Research Report
  • [Presentation] Red light-emitting diodes with site selective GaN:Eu active layer2012

    • Author(s)
      Hiroto Sekiguchi
    • Organizer
      International Workshop on Nitride semiconductors 2012
    • Place of Presentation
      札幌コンベンションセンター、北海道
    • Related Report
      2012 Annual Research Report
  • [Presentation] Luminescence site control of Mg codoped GaN:Eu by NH3-MBE2012

    • Author(s)
      Yasufumi Takagi
    • Organizer
      International Workshop on Nitride semiconductors 2012
    • Place of Presentation
      札幌コンベンションセンター、北海道
    • Related Report
      2012 Annual Research Report
  • [Presentation] Optical characteristics of Europium and Magnesium codoped GaN LEDs grown by NH3-MBE2012

    • Author(s)
      Hiroto Sekiguchi
    • Organizer
      9th International Symposium on Semiconductor Light Emitting Devices 2012
    • Place of Presentation
      TU Berlin, Berlin, Germany
    • Related Report
      2012 Annual Research Report
  • [Presentation] Mg共添加GaN:Euによる赤色域での高効率発光2012

    • Author(s)
      関口寛人
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛・松山大学、愛媛
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] NH3-MBE法によるMg共添加GaN:Euの発光サイト制御2012

    • Author(s)
      大谷龍輝
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛・松山大学、愛媛
    • Related Report
      2012 Annual Research Report
  • [Presentation] Optical properties of Mg codoped GaN:Eu LED grown by NH3-MBE2012

    • Author(s)
      大谷龍輝
    • Organizer
      第31回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺、静岡
    • Related Report
      2012 Annual Research Report
  • [Presentation] NH3-MBE法によるGaN:Eu LEDの発光特性2012

    • Author(s)
      大谷龍輝、松村亮太、関口寛人、高木康文、岡田浩、若原昭浩
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学、東京
    • Related Report
      2011 Research-status Report
  • [Presentation] Mg共添加GaN:Euの発光特性評価2011

    • Author(s)
      大谷龍輝、関口寛人、高木康文、岡田浩、若原昭浩
    • Organizer
      応用物理学会結晶工学分科会
    • Place of Presentation
      2011年年末講演会 東京
    • Year and Date
      2011-12-01
    • Related Report
      2012 Final Research Report
  • [Presentation] GaN:EuへのMg共ドーピングによる発光特性への影響2011

    • Author(s)
      関口寛人、高木康文、大谷龍輝、岡田浩、若原昭浩
    • Organizer
      電子情報通信学会、ED/CPM/LQE研究会
    • Place of Presentation
      京都
    • Year and Date
      2011-11-01
    • Related Report
      2012 Final Research Report
  • [Presentation] NH_3-MBE法によるEu添加GaNへのMgドーピング効果2011

    • Author(s)
      関口寛人、高木康文、岡田浩、若原昭浩
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形
    • Year and Date
      2011-08-01
    • Related Report
      2012 Final Research Report
  • [Presentation] NH3-MBE法によるEu添加GaNへのMgドーピング効果2011

    • Author(s)
      関口寛人、高木康文、岡田浩、若原昭浩
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学、山形
    • Related Report
      2011 Research-status Report
  • [Presentation] Mg共添加GaN:Euの発光特性評価2011

    • Author(s)
      大谷龍輝、関口寛人、高木康文、岡田浩、若原昭浩
    • Organizer
      応用物理学会結晶工学分科会2011年年末講演会
    • Place of Presentation
      学習院大学、東京
    • Related Report
      2011 Research-status Report
  • [Presentation] GaN:EuへのMg共ドーピングによる発光特性への影響2011

    • Author(s)
      関口寛人、高木康文、大谷龍輝、岡田浩、若原昭浩
    • Organizer
      電子情報通信学会、ED/CPM/LQE研究会
    • Place of Presentation
      京都大学、京都
    • Related Report
      2011 Research-status Report
  • [Remarks]

    • URL

      http://www.int.ee.tut.ac.jp/oeg/

    • Related Report
      2012 Final Research Report

URL: 

Published: 2011-08-05   Modified: 2019-07-29  

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