Low Temperature Formation of SingleCrystal Germanium Thin Film by Laser Annealing for Laminated Structure
| Project/Area Number |
23760284
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nara Institute of Science and Technology |
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Principal Investigator |
HORITA Masahiro 奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (50549988)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | 薄膜トランジスタ / ゲルマニウム / シリコン / レーザーアニール / 結晶化 |
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| Research Abstract |
In order to obtain single crystal germanium (Ge) on amorphous substrates, green laser annealing (GLA) for the Ge//Si laminated structure was investigated. We found that the lower Si layer can be crystallized as well as the upper Ge layer. In addition, we also examined CO2infrared laser annealing for the Si//Si laminated structure. The size of poly-Si grains formed by CO2 laser annealing was approximately twice as large (~2 μm) as that by GLA. The upper and lower Si layers were simultaneously crystallized with large grains.
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Report
(3 results)
Research Products
(13 results)
