Fabrication of piezoelectric-field enhanced excitonic devices operating at room-temperature with the use of oxynitride superlattices
| Project/Area Number |
23760285
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
ITAGAKI Naho 九州大学, システム情報科学研究院, 准教授 (60579100)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | 薄膜・量子構造 / エキシトニクス / 酸窒化物半導体 / エキシトニックトランジスタ / ピエゾ電界 / スパッタリング / 量子井戸 / 酸化物半導体 / 結晶成長 |
|---|
| Research Abstract |
Excitonic transistor has attracted much attention because of its potential advantages such as high operation and interconnection speed, small dimensions, and low per consumption. The major challenges for excitonic devices are to increase the operating temperature. Here we have developed a novel semiconductor based on oxynitride and a novel device structure that uses piezoelectric field with the aim to obtain room-temperature operating excitonic devices.
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Report
(3 results)
Research Products
(66 results)
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[Presentation] Sputter Deposition of Single Crystal ZnO Films on 18% Lattice Mismatched c-Al2O3 Substrates via Nitrogen Mediated Crystallization2013
Author(s)
N. Itagaki, K. Kuwahara, S. Iping, K. Oshikawa, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, and M. Shiratani (N. Itagaki)
Organizer
International Symposium on Sputtering and Plasma Processes
Place of Presentation
Kyoto, Japan
Related Report
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[Presentation] Sputter Deposition of Atomically-Flat ZnO Films on Lattice Mismatched Substrates via Nitrogen Mediated Crystallization2013
Author(s)
N. Itagaki, K. Kuwahara, S. Iping, K. Oshikawa, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, and M. Shiratani (N. Itagaki)
Organizer
The Korea Japan Workshop and AJC Meeting
Place of Presentation
自然科学研究機構 岡崎コンファレンスセンター，愛知
Related Report
Invited
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[Presentation] Epitaxial Growth of ZnO Based Semiconductors via Impurity-Additive Mediated2012
Author(s)
N. Itagaki, K. Kuwahara, K. Matsushima, T. Hirose, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani (N. Itagaki)
Organizer
2012 MRS Fall Meeting
Place of Presentation
Boston, United States
Related Report
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[Presentation] Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors2012
Author(s)
N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani (N. Itagaki)
Organizer
The 34th International Symposium on Dry Process
Place of Presentation
Tokyo, Japan
Related Report
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[Presentation] Zinc-Indium Oxynitride Thin Films for Multiple-Quantum–Well Solar Cells2012
Author(s)
N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani (N. Itagaki)
Organizer
11th Asia-Pacific Conference on Plasma Science and Technology
Place of Presentation
Kyoto, Japan
Related Report
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[Presentation] 板垣奈穂, Iping Suhariadi, 桑原和成, 山下大輔, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治,窒素添加結晶化バッファー層によるZnO:Al 薄膜の結晶性制御： 窒素供給量の影響2012
Author(s)
板垣奈穂, Iping Suhariadi, 桑原和成, 山下大輔, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治
Organizer
第59回応用物理学関係連合講演会
Place of Presentation
早稲田大学、東京
Related Report
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