| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Research Abstract |
Fullerene C_<60> molecules crystallize into a fcc structure on crystalline substrates. However, C_<60> crystals are very fragile and chemically unstable due to the weak binding energy, and it is very difficult to apply C_<60> crystals to practical devices. The motivation of this research is to fabricate C60 / III-V compound semiconductors heterostructures by using molecular beam epitaxy (MBE) which is the most used technique for the analysis of epitaxial growth process. We have concentrated on the study of characteristics of C_<60> epitaxial growth on GaAs substrates and the development of new devices using C_<60> molecules in GaAs lattices such as infrared detectors and memory devices.
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