Single Photon Detection by Nanowire Phototransistor Formed byColumnar Quantum Dot
| Project/Area Number |
23760294
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Toyota Technological Institute |
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Principal Investigator |
OHMORI Masato 豊田工業大学, 大学院・工学研究科, 嘱託研究員 (70454444)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | 薄膜・量子構造・コラムナ量子ドット / 単一光子検出器 / 量子ドット / ナノ細線 / MBE / 光検出器 / コラムナ量子ドット |
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| Research Abstract |
Single photon detectors have been fabricated using semiconductor nanostructures, especially quantum dot (QD) and nanowire structures. The nanowire structure was formed by stacking the QD layers with thin spacer layers. The diameter of the nanowire was approximately 20 nm, while the height can be controlled by varying the number of layers and the thickness, up to about 100 nm. From I-V measurement of the diode structure which includes the nanowire, it was found that the nanowire act as the current transport channel. Using this nanowire current channel, the phototransistor structure was also fabricated and the optical and structural properties were studied.
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Report
(3 results)
Research Products
(8 results)
