| Project/Area Number |
23760296
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TATEBAYASHI Jun 東京大学, ナノ量子情報エレクトロニクス研究機構, 特任助教 (40558805)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | ナノワイヤ / 量子ドット / 有機金属気層成長法 / 単一光子発生器 / 太陽電池 / レーザ / 高均一 / 多積層 / 単一光子発生 / ヒ化インジウム / InAs/GaAs / 光子アンチバンチング / 量子もつれ光源 |
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| Research Abstract |
Objective of this research is to establish the growth technique for compound semiconductor nanowires for applications in lasers, single photon emitters and solar cells. I establish the growth technology to form quantum dot structures embedded in nanowires and processing technology for nanowire-based optoelectronic devices. I characterize the optical and device characteristics of the devices utilizing nanowire-quantum dots. I observe single-photon emission process from high-quality single nanowire-quantum dot by means of auto-correlation measurements. I propose and demonstrate a growth scheme to form highly uniform, multi-stacked quantum dots embedded in nanowires and achieve high quality multi-stacked nanowire-quantum dots up to 200 layer without degradation of the optical properties. In addition, we demonstrate optoelectronic devices including lasers, single photon emitters and solar cells utilizing nanowire-quantum dots.
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