| Project/Area Number |
23760313
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tottori University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
|
| Project Status |
Completed (Fiscal Year 2012)
|
| Budget Amount *help |
¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 抵抗変化メモリ (ReRAM) / ReRAM / ペロブスカイト酸化物 / 単結晶 / 銅酸化物超伝導体 / 抵抗変化 / 水素 / Pt / メカニズム / 国際情報交流 |
|---|
| Research Abstract |
We made resistive random access memory (ReRAM) structures using Bi2Sr2CaCu2O8+δ (Bi-2212) single crystal as the memory layer. It was clarified that the introduction of oxygen vacancies to the Bi-2212 single crystal was required for the development of the memory effect and could be achieved by depositing electrodes with low Gibbs free energies. The model which explains the resistance switching of perovskite-oxide-based-ReRAM was proposed based on the results. In addition, we, for the first time, demonstrated that the resistive switching can be caused by migration of hydrogen ions.
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