Development of AlN/Diamond Heterojunction Field Effect Transistor

• Project/Area Number: 23760319
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute for Materials Science
• Principal Investigator: IMURA Masataka 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 研究員 (80465971)
• Co-Investigator(Renkei-kenkyūsha): KOIDE Yasuo 独立行政法人物質・材料研究機構, 光・電子材料ユニット・ワイドギャップ機能材料グループ, グループリーダー (70195650) ; AMANO Hiroshi 名古屋大学, 工学研究科, 教授 (60202694)
• Project Period (FY): 2011 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2011: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
• Keywords: ダイヤモンド / 窒化アルミニウム / 電界効果トランジスタ / ヘテロ接合 / 電子デバイス・電子機器 / 高周波パワーデバイス / III族窒化物半導体 / ヘテロエピタキシャル成長

Research Abstract

The device properties of AlN/diamond heterojunction p-channel FET were improved and the operation mechanism of this FET was investigated. AlN was grown on diamond substrates using metalorganic vapor phase epitaxy. Owing to the etching of AlN just below the source-drain electrodes by Cl2 gas and the adopting the Pd for ohmic contacts, the FET performance was drastically improved. The thermal treatment (1250 oC) in the mixed H2 and NH3 atmosphere for oxygen-terminated diamond surface produced the AlN with good adhesion to diamond substrates and the surface hole-carrier at the same time. Judged from the fact that the FET had a normally-on mode, AlN was considered to be worked as the protection and insulating layer.

Research Products

• [Journal Article] Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20> and <1-100> Zone-Axes of AlN for Polarity Determination (2013)
  • Author(s): M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
  • Journal Title: Jpn. J. Appl. Phys. Volume: 53
  • Peer Reviewed
• [Journal Article] Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction (2013)
  • Author(s): J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide
  • Journal Title: J. Appl. Phys. Volume: 113
  • Peer Reviewed
• [Journal Article] Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric (2013)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
  • Journal Title: Appl. Phys. Lett. Volume: 102
  • Peer Reviewed
• [Journal Article] Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20> and <1-100> Zone-Axes of AlN for Polarity Determination (2013)
  • Author(s): M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
  • Journal Title: Japanese Journal of Applied Physics Volume: 52
  • Peer Reviewed
• [Journal Article] Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric (2013)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
  • Journal Title: Applied Physics Letters Volume: 102 Issue: 11 Pages: 1129101-4
  • DOI: 10.1063/1.4798289
  • Peer Reviewed
• [Journal Article] Interfacial chemical bonding state and band alignment of CaF /hydrogen-terminated diamond heterojunction (2013)
  • Author(s): J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide
  • Journal Title: Journal of Applied Physics Volume: 113 Issue: 12 Pages: 1237061-6
  • DOI: 10.1063/1.4798366
  • Peer Reviewed
• [Journal Article] Development of AlN/diamond heterojunction field effect transistors (2012)
  • Author(s): M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagata, M. Y. Liao, Y. Koide, J. Yamamoto, K. Ban, M. Iwaya, and H. Amano
  • Journal Title: Diam. Relat. Mat. Volume: 24 Pages: 206-209
  • Peer Reviewed
• [Journal Article] 窒化アルミニウム/ダイヤモンドヘテロ接合を用いた電界効果トランジスタ (2012)
  • Author(s): 井村将隆、廖梅勇、小出康夫
  • Journal Title: NEW DIAMOND Volume: 第105号, Vol. 28 No. 2 Pages: 36-38
  • NAID: 40019318460
• [Journal Article] Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices (2012)
  • Author(s): S. H. Cheng, L. W. Sang, M. Y. Liao, J. W. Liu, M. Imura, H. D. Li, and Y. Koide
  • Journal Title: Appl. Phys. Lett. Volume: 101
  • Peer Reviewed
• [Journal Article] Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond (2012)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Journal Title: Appl. Phys. Lett. Volume: 101
  • Peer Reviewed
• [Journal Article] Development of AlN/diamond heterojunction field effect transistors (2012)
  • Author(s): M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagata, M. Y. Liao, Y. Koide, J. Yamamoto, K. Ban, M. Iwaya, and H. Amano
  • Journal Title: Diamond and Related Materials Volume: 5 Pages: 206-209
  • DOI: 10.1016/j.diamond.2012.01.020
  • Peer Reviewed
• [Journal Article] Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond (2012)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Journal Title: Applied Physics Letters Volume: 101 Issue: 25
  • DOI: 10.1063/1.4772985
  • Peer Reviewed
• [Journal Article] Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices (2012)
  • Author(s): S. H. Cheng, L. W. Sang, M. Y. Liao, J. W. Liu, M. Imura, H. D. Li, and Y. Koide
  • Journal Title: Applied Physics Letters Volume: 101 Issue: 23 Pages: 232907-232907
  • DOI: 10.1063/1.4770059
  • Peer Reviewed
• [Journal Article] 窒化アルミニウム／ダイヤモンドヘテロ接合を用いた電界効果トランジスタ (2012)
  • Author(s): 井村将隆、廖梅勇、小出康夫
  • Journal Title: NEW DIAMOND 105 Volume: 28 Pages: 36-38
  • NAID: 40019318460
• [Journal Article] Demonstration of diamond field effect transistors by AlN/diamond heterostructure (2011)
  • Author(s): M. Imura, R. Hayakawa, E. Watanabe, M. Y. Liao, Y. Koide, and H. Amano
  • Journal Title: Phys. Status Solidi-Rapid Res. Lett. Volume: 5 Pages: 125-127
  • Peer Reviewed
• [Journal Article] Demonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure (2011)
  • Author(s): M. Imura, R. Hayakawa, E. Watanabe, M. Y. Liao, Y. Koide, and H. Amano
  • Journal Title: Physica Status Solidi (RRL) Volume: 5 Issue: 3 Pages: 125-127
  • DOI: 10.1002/pssr.201105024
  • Peer Reviewed
• [Presentation] 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ (2013)
  • Author(s): 井村将隆、小出康夫
  • Organizer: つくばテクノロジー・ショーケース2013
  • Place of Presentation: つくば国際会議場
  • Year and Date: 2013-01-22
• [Presentation] Band Configuration of HfO2/hydrogen-terminated Diamond Heterojunction Correlated with Electrical Properties of Metal/HfO2/hydrogen-terminated Diamond Diodes (2013)
  • Author(s): J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: New Diamond and Nano carbon conference (NDNC2013)
  • Place of Presentation: National University, Singapore
• [Presentation] Interfacial Electronic Band Alignment of Ta2O5/hydrogen-terminated Diamond Heterojunction Determined by X-ray Photoelectron Spectroscopy (2013)
  • Author(s): J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: New Diamond and Nano carbon conference (NDNC2013)
  • Place of Presentation: National University, Singapore
• [Presentation] 原子層堆積法による水素終端ダイヤモンド上のAl2O3とHfO2の電子構造 (2013)
  • Author(s): 劉. 江偉、廖梅勇、井村将隆、小出康夫
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ (2013)
  • Author(s): 井村将隆、小出康夫
  • Organizer: Nano tech 2013
  • Place of Presentation: つくば国際会議場
• [Presentation] 原子層堆積法による水素終端ダイヤモンド上のAl2O3とHfO2の電子構造 (2013)
  • Author(s): 劉. 江偉、廖梅勇、井村将隆、小出康夫
  • Organizer: 第 60 回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ (2012)
  • Author(s): 井村将隆、小出康夫
  • Organizer: 第12回NIMSフォーラム
  • Place of Presentation: 東京国際フォーラム
  • Year and Date: 2012-10-25
• [Presentation] Polarity determination of AlN by convergent beam electron diffraction method based on transmission electron microscopy (2012)
  • Author(s): M. Imura, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
  • Organizer: International Workshop on Nitride Semiconductors 2012 (IWN 2012)
  • Place of Presentation: Sapporo Convention Center,Sapporo,Japan
• [Presentation] Al2O3/Diamond Field Effect Transistors using Surface p-Channel Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere (2012)
  • Author(s): M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano:
  • Organizer: IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
  • Place of Presentation: Pacifico Yokohama, Yokohama, Japan
• [Presentation] High dielectric constant oxide on diamond for high power devices (2012)
  • Author(s): S. H. Cheng, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
  • Place of Presentation: Pacifico Yokohama, Yokohama, Japan
• [Presentation] Electrical property of high-k insulator/p-diamond diodes for electric field controlling (2012)
  • Author(s): Y. Koide, G. C. Chen, M. Y. Liao, and M. Imura
  • Organizer: IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
  • Place of Presentation: Pacifico Yokohama, Yokohama, Japan
• [Presentation] Diamond-FET using AlN/diamond heterojunction (2012)
  • Author(s): M. Imura, M. Y. Liao, and Y. Koide
  • Organizer: IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
  • Place of Presentation: Pacifico Yokohama, Yokohama, Japan
• [Presentation] Electrical Transport Mechanism of Field Effect Transistors by AlN/Diamond Heterostructure (2012)
  • Author(s): M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
  • Organizer: International Conference on Diamond and Carbon Materials (Diamond2012)
  • Place of Presentation: the Granada Congress and Exhibitions Centre, Granada, Spain
• [Presentation] High-k insulator/p-diamond structure for gate voltage controlling / High-k insulator/p-diamond structure for gate voltage controlling (2012)
  • Author(s): Y. Koide, G. C. Chen, M. Y. Liao, and M. Imura
  • Organizer: International Conference on Diamond and Carbon Materials (Diamond2012)
  • Place of Presentation: the Granada Congress and Exhibitions Centre, Granada, Spain
• [Presentation] Metal/insulator/p-diamond Structure with Large-permittivity Insulator for Gate Field Controlling (2012)
  • Author(s): Y. Koide, M. Y. Liao, M. Imura, and G. C. Chen
  • Organizer: New Diamond and Nano Carbons 2012 (NDNC2012)
  • Place of Presentation: Conrad San Juan Condado Plaza,San Juan,Puerto Rico
• [Presentation] Field Effect Transistors by AlN/Diamond Heterostructure - past & future - (2012)
  • Author(s): M.Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
  • Organizer: Hasselt Diamond Workshop 2012 SBDD XVII
  • Place of Presentation: The cultuurcentrum Hasselt ,Hasselt,Belgium
• [Presentation] 原子層堆積法により成膜したアルミナゲート表面チャネルダイヤモンドFETの特性評価 (2012)
  • Author(s): 井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、MeiyongLiao、小出康夫、天野浩、松本翼、山崎聡
  • Organizer: 第26回ダイヤモンドシンポジウム
  • Place of Presentation: 青山学院大学青山キャンパス
• [Presentation] 高濃度キャリアの電界制御を目指した強誘電体薄膜/ダイヤモンド接合 (2012)
  • Author(s): 小出康夫、G.C.Chen、廖梅勇、井村将隆
  • Organizer: 第72回応用応用物理学会学術講演会
  • Place of Presentation: 愛媛大学&松山大学
• [Presentation] TEM-CBED法を用いたAlNの極性決定評価 (2012)
  • Author(s): 井村将隆、中島清美、小出康夫、天野浩、津田健治
  • Organizer: 第31回電子材料シンポジウム
  • Place of Presentation: ラフォーレ修善寺
• [Presentation] pチャネルAlN/Diamondヘテロ接合電界効果トランジスタ (2012)
  • Author(s): 井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、MeiyongLiao、小出康夫、天野浩、松本翼、山崎聡
  • Organizer: 第31回電子材料シンポジウム
  • Place of Presentation: ラフォーレ修善寺
• [Presentation] Electrical Transport Mechanism of Field Effect Transistors by AlN/Diamond Heterostructure (2012)
  • Author(s): M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
  • Organizer: International Conference on Diamond and Carbon Materials (Diamond2012)
  • Place of Presentation: The Granada Congress and Exhibitions Centre, Granada, Spain
• [Presentation] High-k insulator/p-diamond structure for gate voltage controlling / High-k insulator/p-diamond structure for gate voltage controlling (2012)
  • Author(s): Y. Koide, G. C. Chen, M. Y. Liao and M. Imura
  • Organizer: International Conference on Diamond and Carbon Materials (Diamond2012)
  • Place of Presentation: The Granada Congress and Exhibitions Centre, Granada, Spain
• [Presentation] 高濃度キャリアの電界制御を目指した強誘電体薄膜／ダイヤモンド接合 (2012)
  • Author(s): 小出康夫、G.C.Chen、廖梅勇、井村将隆
  • Organizer: 第72回応用応用物理学会学術講演会
  • Place of Presentation: 愛媛大学&松山大学
• [Presentation] Field Effect Transistors by AlN/Diamond Heterostructure - past & future -. (2012)
  • Author(s): M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
  • Organizer: Hasselt Diamond Workshop 2012 SBDD XVII(招待講演)
  • Place of Presentation: The cultuurcentrum Hasselt ,Hasselt,Belgium
• [Presentation] AlN/Diamondヘテロ接合型ダイヤモンド電界効果トランジスタの開発 (2011)
  • Author(s): 井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
  • Organizer: 第25回ダイヤモンドシンポジウム
  • Place of Presentation: 産業技術総合研究所 共用講堂
  • Year and Date: 2011-12-07
• [Presentation] AlN/Diamondヘテロ接合型電界効果トランジスタの開発 (2011)
  • Author(s): 井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
  • Organizer: 日本金属学会2011年秋
  • Place of Presentation: 沖縄コンベンセンションセンター
  • Year and Date: 2011-11-06
• [Presentation] Development of Diamond Field Effect Transistors by AlN / Diamond Heterostructure (2011)
  • Author(s): M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
  • Organizer: 22nd European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes and Nitrides(Diamond2011)
  • Place of Presentation: Garmisch - Partenkirchen,Bavaria,German
  • Year and Date: 2011-09-07
• [Presentation] Diamond Field Effect Transistors by AlN/Diamond Heterostructure (2011)
  • Author(s): M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
  • Organizer: International Conference on New Diamond and Nano Carbons 2011 (NDNC2011)
  • Place of Presentation: Kunibiki Messe, Matsue, Japan
  • Year and Date: 2011-05-19
• [Presentation] AlN/ダイヤモンドヘテロ構造トランジスタ (2011)
  • Author(s): 井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-26
• [Presentation] Demonstration of AlN/Diamond Heterostructure Field Effect Transistors (2011)
  • Author(s): M. Imura, R. Hayakawa, H. Oosato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
  • Organizer: MANA International Symposium 2011 (MANA Sympo. 2011)
  • Place of Presentation: Epochal Tsukuba, Tsukuba, Japan
  • Year and Date: 2011-03-03
• [Presentation] AlN/Diamondヘテロ接合型ダイヤモンド電界効果トランジスタ (2011)
  • Author(s): 井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
  • Organizer: 第72回応用応用物理学会学術講演会
  • Place of Presentation: 山形大学
• [Presentation] Development of Diamond Field Effect Transistors by AlN / Diamond Heterostructure (2011)
  • Author(s): M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
  • Organizer: 22nd European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes and Nitrides (Diamond2011)
  • Place of Presentation: Garmisch - Partenkirchen,Bavaria,German