Development of nanogap junction non-volatile memory
Project/Area Number |
23760320
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Electron device/Electronic equipment
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Research Institution | Chiba Institute of Technology (2012) National Institute of Advanced Industrial Science and Technology (2011) |
Principal Investigator |
SUGA Hiroshi 千葉工業大学, 工学部, 助教 (60513801)
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Project Period (FY) |
2011 – 2012
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Project Status |
Completed (Fiscal Year 2012)
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Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2012: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2011: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
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Keywords | トンネル現象 / マイクロ・ナノデバイス / 熱工学 / 電子デバイス / ナノギャップ / ナノ空間 / 白金 / エレクトロマイグレーション / 不揮発性記憶素子 / 高温耐久素子 / ナノエレクトロニクス / 電子デバイス・機器 |
Research Abstract |
The studies on the mechanism of nanogap junction non-volatile memory were conducted.Nanogap memory with high-melting-point-metal electrodes was fabricated and evaluated.A method for the fabrication of single-crystalline nanogap on Si substrates was developed.
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Report
(3 results)
Research Products
(14 results)
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[Journal Article] Non-volatile high-speed resistance switching nanogap junction memory2011
Author(s)
Somu Kumaragurubaran, 高橋 剛, 増田 雄一郎, 古田 成生, 角谷 透, 小野 雅敏, 清水 哲夫, 菅 洋志, 堀川 昌代, 内藤 泰久,
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Journal Title
Applied Physics Letters
Volume: 99
Issue: 26
DOI
Related Report
Peer Reviewed
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[Presentation] 単結晶ナノ電極の作製と評価2011
Author(s)
菅 洋志, 角谷透, 古田成生, 植木竜一, 宮澤陽介, 西嶋拓哉, 藤田淳一, 塚越 一仁, 清水 哲夫, 内藤 泰久,
Organizer
第72回応用物理学会学術講演会
Place of Presentation
山形県,山形大学
Related Report
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[Presentation] Fabrication and Evaluation of Single Crystalline Nanoelectrodes2011
Author(s)
H. Suga, T. Sumiya, S. Furuta, R. Ueki, Y. Miyazawa, T. Nishijima, J. Fujita, K. Tsukagoshi, Y. Naitoh1, and T. Shimizu
Organizer
International Symposium on Surface Science(ISSS-6)
Place of Presentation
Japan Tokyo, Tower Haoo Funabori
Related Report