Development of nanogap junction non-volatile memory

• Project/Area Number: 23760320
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Chiba Institute of Technology (2012); National Institute of Advanced Industrial Science and Technology (2011)
• Principal Investigator: SUGA Hiroshi 千葉工業大学, 工学部, 助教 (60513801)
• Project Period (FY): 2011 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2012: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000); Fiscal Year 2011: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
• Keywords: トンネル現象 / マイクロ・ナノデバイス / 熱工学 / 電子デバイス / ナノギャップ / ナノ空間 / 白金 / エレクトロマイグレーション / 不揮発性記憶素子 / 高温耐久素子 / ナノエレクトロニクス / 電子デバイス・機器

Research Abstract

The studies on the mechanism of nanogap junction non-volatile memory were conducted.Nanogap memory with high-melting-point-metal electrodes was fabricated and evaluated.A method for the fabrication of single-crystalline nanogap on Si substrates was developed.

Research Products

• [Journal Article] Single-Crystalline Nanogap Electrodes:Enhancing the Nanowire-Breakdown Process with a Gaseous Environment (2012)
  • Author(s): H. Suga, T. Sumiya, S. Furuta, R. Ueki, Y. Miyazawa, T. Nishijima, J. Fujita, K. Tsukagoshi, T. Shimizu, and Y. Naitoh
  • Journal Title: ACS Applied Materials and Interfaces Volume: 4 Pages: 5542-5542
  • Peer Reviewed
• [Journal Article] Resistance switch using metal nanogap electrodes in air (2012)
  • Author(s): H. Suga, M. Horikawa, S. Kumaragurubaran, S. Furuta, Y. Masuda, T. Shimizu, and Y. Naitoh
  • Journal Title: Journal of applied physics Volume: 112 Pages: 44309-44309
  • Peer Reviewed
• [Journal Article] Single-Crystalline Nanogap Electrodes: Enhancing the Nanowire-Breakdown Process with a Gaseous Environment (2012)
  • Author(s): H. Suga, T. Sumiya, S. Furuta, R. Ueki, Y. Miyazawa, T. Nishijima, J. Fujita, K. Tsukagoshi, T. Shimizu, and Y. Naitoh
  • Journal Title: ACS Applied Materials and Interfaces Volume: 4 Issue: 10 Pages: 5542-5546
  • DOI: 10.1021/am301441a
  • Peer Reviewed
• [Journal Article] Non-volatile high-speed resistance switching nanogap junction memory (2011)
  • Author(s): S. Kumaragurubaran, T. Takahashi, Y. Masuda, S. Furuta, S. Torou, M. Ono, T. Shimizu, H. Suga, M Horikawa, Y. Naitoh
  • Journal Title: Applied Physics Letters Volume: 99
  • Peer Reviewed
• [Journal Article] Physical Model for High-to-Low Resistive Switching of Gold Nanogap Junction (2011)
  • Author(s): Y. Naitoh, H. Suga, and M. Horikawa
  • Journal Title: Japanese Journal of Applied Physics Volume: 50
  • NAID: 210000070692
  • Peer Reviewed
• [Journal Article] Threshold Current Density of the Resistance Switching in Pt Nanogap Electrode (2011)
  • Author(s): H. Suga, T. Sumiya, M. Horikawa, S. Kumaragurubaran, T. Shimizu, and Y. Naitoh
  • Journal Title: Japanese Journal of Applied Physics Volume: 50
  • NAID: 210000070693
  • Peer Reviewed
• [Journal Article] Non-volatile high-speed resistance switching nanogap junction memory (2011)
  • Author(s): Somu Kumaragurubaran, 高橋 剛, 増田 雄一郎, 古田 成生, 角谷 透, 小野 雅敏, 清水 哲夫, 菅 洋志, 堀川 昌代, 内藤 泰久,
  • Journal Title: Applied Physics Letters Volume: 99 Issue: 26
  • DOI: 10.1063/1.3672195
  • Peer Reviewed
• [Presentation] SEM 中ナノマニピュレータによる 遷移金属ダイカルコゲナイド薄膜の作製と電気特性評価 (2013)
  • Author(s): 安藤淳, 清水哲夫, 菅洋志, 森田行則, 田端祐輔,上野啓司
  • Organizer: 第60回応用物理学会春季学術講演会
• [Presentation] Mechanical Exfoliation of Transition Metal Dichalcogenides Using Mechanical Probes (2012)
  • Author(s): A. Ando, T. Shimizu, H. Suga, and Y. Morita
  • Organizer: 20th International Colloquium on Scanning Probe Microscopy
  • Year and Date: 2012-12-19
• [Presentation] Fabrication and Electrical Characterization of Metal/MoS2/Metal Structures under SEM Observatio (2012)
  • Author(s): Atsushi Ando, Tetsuo Shimizu, Hiroshi Suga, Yukinori Morita
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛県
  • Year and Date: 2012-09-12
• [Presentation] 多層MoS2シート試料のSEM観察下マニピュレーション (2012)
  • Author(s): 安藤淳,清水哲夫,菅洋志,森田行則
  • Organizer: 日本顕微鏡学会 第68回学術講演会
  • Place of Presentation: 茨城県
  • Year and Date: 2012-05-16
• [Presentation] 走査電子顕微鏡観察下マニピュレーションによる MoS2 チャネル 3 端子デバイスの作製とその電気特性評価 (2012)
  • Author(s): 安藤淳,清水哲夫,菅洋志,森田行則
  • Organizer: 真空学会
• [Presentation] 単結晶ナノ電極の作製と評価 (2011)
  • Author(s): 菅 洋志, 角谷透, 古田成生, 植木竜一, 宮澤陽介, 西嶋拓哉, 藤田淳一, 塚越 一仁, 清水 哲夫, 内藤 泰久,
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形県，山形大学
• [Presentation] Fabrication and Evaluation of Single Crystalline Nanoelectrodes (2011)
  • Author(s): H. Suga, T. Sumiya, S. Furuta, R. Ueki, Y. Miyazawa, T. Nishijima, J. Fujita, K. Tsukagoshi, Y. Naitoh1, and T. Shimizu
  • Organizer: International Symposium on Surface Science(ISSS-6)
  • Place of Presentation: Japan Tokyo, Tower Haoo Funabori