Structure and carrier transport property of electrode interfaces in wide-gap semiconducting carbides by using atom-resolved characterization
| Project/Area Number |
23760622
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Physical properties of metals
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| Research Institution | Tohoku University |
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Principal Investigator |
TSUKIMOTO Susumu 東北大学, 原子分子材料科学高等研究機構, 講師 (50346087)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 電極界面 / 原子構造 / 電気特性 / 界面 / 半導体 / 電流輸送 |
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| Research Abstract |
The atomic structure of the lattice defects and hetero-interfaces in electronic devices is required to understand for control of the electron transport property and technological manipulation. Using advanced electron microscopy, we characterize qualitatively the atomic structure of the ion-implanted defects and contact electrode interfaces in silicon carbide semiconductor. Theoretical calculations predict quantitatively that this interface enable lowered Schottky barrier and enhance carrier transport. The combined experimental and theoretical studies performed provide insight into the complexelectronic and electric effects in the devices, which are fundamental for improving the properties in the electronics.
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Report
(3 results)
Research Products
(14 results)
